Unlock instant, AI-driven research and patent intelligence for your innovation.

A tft array substrate and display panel

A technology of array substrates and substrates, which can be used in instruments, nonlinear optics, optics, etc., and can solve problems such as poor screen display effect.

Active Publication Date: 2017-02-22
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD +1
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An embodiment of the present invention provides a TFT array substrate and a display panel, which are used to solve the problem of poor picture display effect in the display panel composed of TFTs with island-shaped ESLs in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A tft array substrate and display panel
  • A tft array substrate and display panel
  • A tft array substrate and display panel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Please refer to image 3 , is a schematic cross-sectional structure diagram of the TFT array substrate provided in Embodiment 1 of the present invention. As shown in the figure, the TFT array substrate includes: a substrate 10 , a gate 20 on the substrate 10 , a first insulating layer 90 , a semiconductor pattern 40 , an etching protection pattern 50 , source and drain electrodes 60 , and data lines 100 .

[0033] Specifically, the first insulating layer 90 covers the gate 20; the semiconductor pattern 40 is located above the first insulating layer 90, and the semiconductor pattern 40 is arranged correspondingly to the gate 20. Optionally, the material of the semiconductor pattern 40 is oxide material semiconductor; the etching protection pattern 50 is located above the semiconductor pattern 40 and covers part of the semiconductor pattern 40, wherein the etching protection pattern 50 is an island pattern; the source electrode and the drain electrode 60 are located betwe...

Embodiment 2

[0040] Please refer to Figure 6 , is a schematic cross-sectional structure diagram of the TFT array substrate provided in Embodiment 2 of the present invention. As shown in the figure, the TFT array substrate provided by Embodiment 2 includes: a substrate 10, a gate 20 located on the substrate 10, a first insulating layer 90, a semiconductor pattern 40, an etching protection pattern 50, and a source and a drain 60 .

[0041] Specifically, the first insulating layer 90 covers the gate 20; the semiconductor pattern 40 is located above the first insulating layer 90, and the semiconductor pattern 40 is arranged correspondingly to the gate 20. Optionally, the material of the semiconductor pattern 40 is oxide material semiconductor; the etching protection pattern 50 is located above the semiconductor pattern 40 and covers part of the semiconductor pattern 40, wherein the etching protection pattern 50 is an island pattern; the source electrode and the drain electrode 60 are located...

Embodiment 3

[0047] refer to Figure 9 As shown, Embodiment 3 of the present invention also provides a display panel, which includes the TFT array substrate 11 as described above, a color filter substrate 12 disposed opposite to the TFT array substrate 11, and a display panel located between the TFT array substrate 11 and the TFT array substrate 11. The liquid crystal molecule layer 13 between the color filter substrates 12 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a TFT (thin film transistor) array substrate and a display panel. The problem that an image displaying effect of a display panel consisting of a TFT with an island-shaped ESL (equivalent series inductor) is poor in the prior art is solved. The TFT in the TFT array substrate comprises a grid electrode, a first insulating layer, a semi-conductor graph, an etching protecting graph, a source electrode and a drain electrode, wherein the source electrode and the drain electrode do not directly cover the edge of the semi-conductor graph; and the edge of the semi-conductor graph is a border edge which is adjacent to the first insulating layer. By using the technical scheme, the source electrode and the drain electrode do not directly cover a sunken area of the first insulating layer at the border edge of the semi-conductor graph, the problem of short-circuiting of the TFT due to a point discharging effect is solved, and the displaying effect of the display panel is improved.

Description

technical field [0001] The invention relates to the field of display panels, in particular to a TFT array substrate and a display panel including the TFT array substrate. Background technique [0002] At present, the TFT (Thin Film Transistor; thin film transistor) structure with an island-shaped ESL (Etch-stop layer, etch protection layer) has been widely used due to its small parasitic capacitance. see Figure 1a As shown, it is a schematic cross-sectional structure diagram of a typical TFT array substrate with an island-shaped ESL. As shown in the figure, the TFT array substrate includes a substrate 1 and a TFT located on the substrate 1, and the TFT includes a gate 2 located on the substrate 1. A gate insulating layer 3 , a semiconductor pattern 4 , an etching protection pattern 5 , a source electrode and a drain electrode 6 , and a passivation layer 7 . Among them, the top view of TFT refers to Figure 1b shown. [0003] At present, when manufacturing TFTs with islan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1368
Inventor 楼均辉
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD