Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGBT-module installation method

A technology of installation method and installation location, which is applied in the manufacture of electrical components, electric solid devices, semiconductor/solid devices, etc., can solve problems such as module insulation failure, damage to IGBT module subunits in the installation method, module damage, etc., to achieve the goal of solving damage Effect

Inactive Publication Date: 2014-07-09
XIAN YONGDIAN ELECTRIC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, IGBT has been widely used in various industries of the national economy, but the module may be damaged during the actual IGBT module installation process
Improper installation methods may directly cause damage to the internal subunits of the IGBT module and cause module insulation failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT-module installation method
  • IGBT-module installation method
  • IGBT-module installation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] Experience has shown that the early failure of power semiconductor modules is mainly related to incorrect installation, and incorrect installation will lead to unnecessary high junction temperature, which will greatly reduce the working life of the module. So the correct installation of the module is very important.

[0027] In view of this, the embodiment of the present invention discloses a method for installing an IGBT module, including:

[0028] s1. Clean the contact surface between the IGBT module and the heat sink;

[0029] s2. Select a predetermined installation location;

[0030] s3, coating thermal grease between the IGBT module and the heat sink;

[0031] s4. Install fasteners. All fasteners used to fix the IGBT module must be tightened with a consistent torque, and the fasteners should be tightened in diagonal order.

[0032] The above solves the damage caused by the installation process of the high-power IGBT module, and can better improve the reliability...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Roughnessaaaaaaaaaa
Flatnessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an IGBT-module installation method. The method includes: s1: cleaning a contact face of the IGBT module and a cooling fin; s2: selecting a preset installing position; s3: coating a thermal conductive grease between the IGBT module and the cooling fin; s4: installing fasteners and fastening all of the fasteners used for fixing the IGBT module with a consistent torque and fastening the fasteners according to the sequence of diagonal lines. Through the reasonable installation method, a problem of damages caused in an installation process of a large-power IGBT module is solved so that the reliability of the module can be better improved and the reliability of the whole application system can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to an installation method of an IGBT module. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has a MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It has been more and more widely used in modern power electronics technology, and occupies a domi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/50H01L21/58
CPCH01L25/50
Inventor 李君伟
Owner XIAN YONGDIAN ELECTRIC
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com