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transmission gate circuit

A transmission gate circuit and circuit technology, which is applied in the direction of logic circuit connection/interface arrangement, electrical components, electronic switches, etc., can solve the problems such as the inability to provide pull-up current and inductive error of the transmission gate circuit 20

Active Publication Date: 2017-11-14
STMICROELECTRONICS SHANGHAI R&D
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But because of the first resistor 22, the resistor divider introduces additional inductive errors into the circuit 20
In some cases, because the second resistor 23 introduces a pull-down current path from the source of the DMOS transistor 21 to ground, it cannot provide a pull-up current to the transfer gate 20.

Method used

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Embodiment Construction

[0024] The making and using of the embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable innovative concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0025] image 3 A transmission gate circuit 100 of a first embodiment of the present invention is shown. The transmission gate circuit 100 can be cascaded on the internal input node of the circuit element composed of low-voltage transistors as an input interface for clamping the amplitude of the signal provided to the internal input node and protecting the low-voltage transistor from breakdown.

[0026] Such as image 3 As shown, the transmission gate circuit 100 includes: a first transistor 101 coupled between an input node 103 for receiving an input signal Vin and an output node ...

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PUM

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Abstract

The invention discloses a transmission gate circuit. The circuit includes a first transistor coupled between an input node for receiving an input signal and an output node for outputting an output signal; a second transistor for generating a voltage difference responsive to a bias current flowing through the second transistor and applying the voltage difference between the first gate of the first transistor and the output node; and an amplifier for comparing the output signal and a reference voltage, and supply the bias current to the second transistor according to the comparison result.

Description

technical field [0001] The present invention relates generally to electronic circuits, and more particularly to a transfer gate circuit. Background technique [0002] In many high-voltage circuit applications, a pass-gate circuit element is cascaded at the input stage of the circuit to limit the amplitude of the input signal before it is provided to the internal circuit element consisting of low-voltage transistors. The transmission gate circuit element can protect the low-voltage transistors in the internal circuit from breakdown due to unexpected high voltage, which improves the stability of the high-voltage circuit. [0003] figure 1 Shown is an existing transmission gate circuit 10 . Such as figure 1 As shown, the transmission gate circuit 10 includes a DMOS transistor 11 coupled between an input node 12 and an intermediate node 13 of an internal Schmitt trigger 14 . The gate of the DMOS transistor 11 receives the power supply voltage Vsup. However, when passing the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0175
CPCH03K17/102H03K2217/0054
Inventor 王飞郑鲲鲲
Owner STMICROELECTRONICS SHANGHAI R&D