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Zone melt recrystallization of thin films
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A recrystallization and segmental technology, applied in the direction of final product manufacturing, circuit, climate sustainability, etc., can solve the problem of high cost of solar cells
Inactive Publication Date: 2014-07-16
INTEGRATED PHOTOVOLTAICS
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[0012] Conventional solar cells are still expensive
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[0032] Such as Figure 10 As shown in , some embodiments include multiple layers and multiple process steps. Some layers and steps are optional. Figure 10 An example embodiment of process 1000 is shown that includes the following required steps: Step 105 is selecting a substrate, step 115 is depositing a first layer; and step 120 is recrystallizing the first layer, which includes steps 120-02 to 120-16 . All other steps are optional and may or may not be used in any particular implementation. For the present invention, at least one layer is recrystallized; steps 120 and 140, including steps 1202 to 1216, are steps that may be used for recrystallization. Deoxidation can be done in a low pressure environment with increased temperature or with a degassing step; hydrogen passivation can be done with a hydrogen atmosphere at temperatures above about 800°C; can be done with seed crystals of the topmost substrate layer or selective substrate texturing or The chosen composition i...
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Abstract
A solar cell comprises a recrystallized layer wherein the recrystallized layer has at least one crystal grain at least 90% of the size of the illuminated area of the solar cell.
Description
[0001] priority [0002] This application is a continuation-in-part of U.S. 13 / 010,700 filed January 20, 2011 and claims priority from US provisional application 61 / 296,799, filed January 20, 2010, both of which are incorporated by reference. [0003] Cross References to Related Applications [0004] This application is related to U.S. Application Nos. 12 / 074,651, 12 / 720,153, 12 / 749,160, 12 / 789,357, 12 / 860,048, 12 / 860,088, 12 / 950,725, 13 / 010,700, 13 / 019,965, 13 / 073,884, 13 / 077,870, / 214,158 and U.S. Part 7,789,331 are related; all of these applications are owned by the same assignee and are incorporated by reference in their entirety. Additional technical description and background are cited in the cited material. technical field [0005] The technology generally relates to a process for achieving large grain growth in thin films, with particular application in the preparation of silicon layers for use in photovoltaic devices. Background technique [0006] Zone-melt recry...
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