Sense amplifier and flash memory device
A technology of sensitive amplifier and flash memory storage, applied in the field of storage, can solve the problem of slow speed of establishing the target voltage of the sensitive amplifier, and achieve the effects of speeding up, improving working performance and low energy consumption
Active Publication Date: 2014-07-30
GIGADEVICE SEMICON (BEIJING) INC
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Problems solved by technology
[0004] In view of this, an embodiment of the present invention provides a sense amplifier and a flash storage device to solve the problem that the sense amplifier is slow in establishing a target voltage
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[0029] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.
[0030] exist figure 2 A first embodiment of the invention is shown in .
[0031] figure 2 It is a circuit structure diagram of a sense amplifier according to the first embodiment of the present invention, and the sense amplifier includes: a bias circuit 11 and an amplifying circuit 12 .
[0032] Wherein, one end of the bias circuit 11 is connected with the power supply VDD, and the other end of the bias circuit 11 is connected with the first end of the amplifying circuit 12, and the bias circuit 11 is used to provide the a...
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The invention discloses a sense amplifier and a flash memory device. The sense amplifier comprises a bias circuit and an amplifying circuit, wherein one end of the bias circuit is connected with a power supply, and the other end of the bias circuit is connected with the first end of the amplifying circuit; the bias circuit is used for outputting a first bias voltage to the amplifying circuit during working of the sense amplifier and outputting a second bias voltage to the amplifying circuit when the sense amplifier does not work; the second bias voltage is between a grounding voltage and the first bias voltage; the second end of the amplifying circuit is connected with the power supply; the third end of the amplifying circuit is used for outputting a stable voltage. According to the invention, the energy consumption is lowered when the sense amplifier does not work, the target voltage establishing speed can be increased during working of the sense amplifier, and the working performance of the sense amplifier is improved.
Description
technical field [0001] The invention relates to the technical field of storage, in particular to a sense amplifier and a flash memory storage device. Background technique [0002] The sense amplifier (Sense amplifier) is a very important circuit in the memory, which is mainly used to identify the state of the data bit stored in the storage unit. The sense amplifier needs a constant bias voltage when it works normally. The bias voltage It can be provided by a bias voltage generation circuit. In practical applications, it is necessary to make the sense amplifier have as low power consumption as possible when it is not working, and it can quickly stabilize to the target voltage when the sense amplifier is working. [0003] figure 1 is the circuit diagram of the sense amplifier in the prior art. like figure 1 As shown, a low level is input at the first input terminal EN, a low level is input at the second input terminal IVREF, the first PMOS transistor P1 is turned off, the...
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IPC IPC(8): G11C16/06
Inventor 陈晓璐
Owner GIGADEVICE SEMICON (BEIJING) INC