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Test Structure and Test Method of Transistor Overlap Capacitance

A technology of overlapping capacitance and test structure, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., can solve the problems of complex transistor overlapping capacitance testing methods, difficulty in accurately obtaining overlapping capacitance values, etc., and achieve a simple testing method. , The effect of accurate and simple test

Active Publication Date: 2017-11-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art, the test method for the overlapping capacitance of the transistor is complicated, and it is difficult to accurately obtain the value of the overlapping capacitance

Method used

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  • Test Structure and Test Method of Transistor Overlap Capacitance
  • Test Structure and Test Method of Transistor Overlap Capacitance
  • Test Structure and Test Method of Transistor Overlap Capacitance

Examples

Experimental program
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no. 1 example

[0038] Please refer to figure 2 , providing the first test structure.

[0039] The first test structure includes a first transistor 110 formed on the first semiconductor substrate 100 and first connection structures 120a, 120b, the first transistor 110 includes a first gate on the first semiconductor substrate 100 structure, the first gate structure includes a first gate dielectric layer 101, a first gate 102 located on the surface of the first gate dielectric layer 101, a The first side wall 105 of the wall surface.

[0040] The first test structure also includes a first source region 103 and a first drain region 104 located in the first semiconductor substrate 100 on both sides of the first gate 102, and the first source region 103 and the first drain region Region 104 is partially located under the first gate structure, forming a first overlapping region.

[0041] The first source region 103 includes a first heavily doped region 103a and a first lightly doped region 103...

no. 2 example

[0069] In other embodiments of the present invention, the first test structure and the second test structure may also have a plurality of transistors.

[0070] Please refer to Figure 6 , is a top view of the first test structure in the second embodiment. The first test structure includes a plurality of strip-shaped first transistors 310 arranged side by side on the first semiconductor substrate 300 and a first connection structure 320 parallel to the first gate structure 301 of the first transistors 310 , and between the first transistors 310 arranged in parallel, the sources and drains of adjacent first transistors are shared, so the first connection structure 320 simultaneously connects the shared source and drain regions. And the first transistor 310 is the same as the first transistor 110 in the first embodiment (please refer to figure 2 ) are formed in the same way, and there is a first overlapping region (not shown in the figure) under the first gate structure 301 . ...

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Abstract

A test structure for transistor overlap capacitance and a test method thereof, the test method for transistor overlap capacitance includes: providing a first test structure, the first test structure includes a first transistor and a first transistor formed on a first semiconductor substrate A connection structure, the first source region and the first drain region of the first transistor have a first overlapping region located below the first gate, and the first connection structure is located on the surface of the first source region and the first drain region; testing to obtain a first capacitance between the first gate and the first connection structure; providing a second test structure comprising a second transistor and a second connection structure formed on a second semiconductor substrate, and The second source region or the second drain region on one side of the second gate has a second overlapping region located under the second gate, and the second connection structure is located on the surface of the second source region and the second drain region; testing the first The second capacitance between the two gates and the second connection structure; the overlap capacitance of the first transistor is calculated.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a test structure and a test method for transistor overlap capacitance. Background technique [0002] In the field of existing integrated circuits and semiconductor manufacturing, transistors are one of the basic components constituting semiconductor devices, and are therefore widely used. With the integration of integrated circuits and the miniaturization of semiconductor devices, the performance of transistors has an increasingly significant impact on integrated circuits. Among the factors affecting the performance of transistors, the overlapping capacitance of transistors has an influence on the operating efficiency of semiconductor devices formed of transistors. [0003] Please refer to figure 1 , is a schematic cross-sectional structure diagram of a transistor in the prior art, including: a semiconductor substrate 10; a gate structure 11 located on the surface of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 李勇洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP