Testing structure and testing method for transistor overlapping capacitance
A technology for testing structure and overlapping capacitance, which is applied in circuits, measuring devices, electrical components, etc., can solve the problems of complex testing methods for transistor overlapping capacitance and difficulty in accurately obtaining overlapping capacitance values.
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no. 1 example
[0038] Please refer to figure 2 , providing the first test structure.
[0039] The first test structure includes a first transistor 110 formed on the first semiconductor substrate 100, a first connection structure 120a, and a first connection structure 120b, and the first transistor includes a first transistor on the first semiconductor substrate 100. A gate structure, the first gate structure includes a first gate dielectric layer 101, a first gate 102 located on the surface of the first gate dielectric layer 101, a first gate gate 102 located on the first gate dielectric layer 101 and a first gate The first side wall 105 on the side wall surface of the pole 102 .
[0040] The first test structure further includes a first source region 103 and a first drain region 104 located in the first semiconductor substrate 100 on both sides of the first gate 102 . Parts of the first source region 103 and the first drain region 104 are located under the first gate structure, forming a...
no. 2 example
[0065] In other embodiments of the present invention, the first test structure and the second test structure may also have a plurality of transistors.
[0066] Please refer to Figure 6 , is a top view of the first test structure in the second embodiment. The first test structure includes a plurality of strip-shaped first transistors 310 arranged side by side on the first semiconductor substrate 300 and a first connection structure 320 parallel to the first gate structure 301 of the first transistors 310 , and the source and drain regions of adjacent first transistors between the first transistors 310 arranged in parallel are shared, so the first connection structure 320 is connected to the shared source and drain regions at the same time. And there is a first overlapping region of source and drain (not shown in the figure) under the first gate 301 .
[0067] Specifically, the number of first transistors 310 in the first test structure is n, where n is greater than or equal ...
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