Pipeline temperature control device

Abstract

The invention proposes a pipeline temperature control device, adding a heating unit to the exhaust pipeline, and the temperature control unit controls the heating unit to heat the exhaust pipeline to keep it at a predetermined temperature, and the temperature measuring unit detects the exhaust pipeline temperature, and feed back the test results to the temperature control unit to avoid large fluctuations in the temperature of the exhaust pipeline. Bring it to the surface of the silicon wafer to form bubble defects, thereby improving the qualified rate of the silicon wafer. In addition, the protection unit is used to protect the entire device. When there are abnormal conditions such as leakage, temperature control unit out of control, temperature measurement unit falling off, and power failure, it will protect the entire device, stop heating or stop the reaction chamber for the next round of reaction. Improve the operational reliability of the entire device.

Description

technical field [0001] The invention relates to the semiconductor chip manufacturing industry, in particular to a pipeline temperature control device. Background technique [0002] Currently, as chip integration increases and devices become smaller, feature sizes must be scaled down proportionally. Therefore, the precision requirements in the semiconductor manufacturing process are getting higher and higher. In processes used to manufacture semiconductor devices, such as deposition processes and etching processes, when various gases or liquids are supplied to the reaction chamber, a flow controller is usually provided on the gas pipeline to control the flow. After the reaction is completed, it is necessary to evacuate the reaction chamber or the furnace tube to remove the by-products and residual gas generated by the reaction. [0003] In the chemical vapor deposition process, TEOS (tetraethyl orthosilicate) is used to react with oxygen to form a silicon dioxide film. The ...

AI Technical Summary

Problems solved by technology

As time goes by, TEOS and by-products will accumulate in the exhaust pipe, and before the next round of reaction, the reaction chamber will enter the atmosphere and drop to normal temperature. At this time, the TEOS accumulated in the exhaust pipe will And the by-products will absorb moisture and introduce water vapor. During the next round of reaction, the piston effect formed between the silicon wafer entering the reaction chamber and the reaction chamber will bring the by-products and water vapor accumulated in the exhaust pipe to the silicon wafer. surface, eventually leading to the generation of bubble (Bubble) defects during silicon dioxide deposition

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