Magnetic memory and method for providing and programming the magnetic memory

一种磁存储器、磁性结的技术，应用在静态存储器、数字存储器信息、信息存储等方向，能够解决很难提供、不可能提供存储器等问题

Active Publication Date: 2014-09-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It may be difficult or impossible to provide such memory given the challenges described above

Method used

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  • Magnetic memory and method for providing and programming the magnetic memory
  • Magnetic memory and method for providing and programming the magnetic memory
  • Magnetic memory and method for providing and programming the magnetic memory

Examples

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Embodiment Construction

[0042] Exemplary embodiments relate to magnetic memory and magnetic junctions usable with such magnetic memory Described below. Various modifications to the exemplary embodiments and general principles and features described herein will be readily apparent. Exemplary embodiments are primarily described in terms of particular methods and systems provided in particular implementations. However, the methods and systems described will work effectively in other implementations. Phrases such as "exemplary embodiment," "one embodiment," and "another embodiment" may refer to the same or different embodiments as well as multiple embodiments. Embodiments will be described with respect to systems and / or devices having particular components. However, the system and / or device may include more or fewer components than those shown, and changes may be made in the arrangement and type of components without departing from the scope of the present invention. Exemplary embodiments will also b...

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Abstract

A magnetic memory includes memory array tiles (MATs), intermediate circuitry, global bit lines and global circuitry. The magnetic memory and a method for programming the magnetic memory are provided. Each MAT includes bit lines, word lines, and magnetic storage cells having magnetic junction(s), selection device(s) and at least part of a spin-orbit interaction (SO) active layer adjacent to the magnetic junction(s). The SO active layer exerts a SO torque on the magnetic junction(s) due to a preconditioning current passing through the SO active layer. The magnetic junction(s) are programmable using write current(s) driven through the magnetic junction(s) and the preconditioning current. The bit and word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a portion of the MATs. The global circuitry selects and drives portions of the global bit lines for read operations and write operations.

Description

[0001] Cross References to Related Applications [0002] This application claims Serial No. 61 / 2013 of the March 14, 2013 application, entitled "Magnetic Memory Including Magnetic Tunnel Junction Using Spin-Orbit Interaction Based Switching," assigned to the assignee of this application. The benefit of Provisional Patent Application No. 785,908, which is hereby incorporated by reference. This application also claims Serial No. 61 of the March 15, 2013 application, entitled "Magnetic Memory Including Magnetic Tunnel Junction Using Spin-Orbit Interaction Based Switching," assigned to the assignee of this application. / 798,578, which is hereby incorporated by reference. Background technique [0003] Magnetic memories, especially Magnetic Random Access Memory (MRAM), have attracted increasing attention due to their potential for high read / write speeds, outstanding endurance, non-volatility, and low power consumption during operation. more attention. MRAM can store information u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/667
CPCG11C11/16G11C11/161G11C11/1653G11C11/1659G11C11/1673G11C11/1675G11C11/18
Inventor A.E.昂格A.V.克瓦尔科夫斯基D.阿帕尔科夫
Owner SAMSUNG ELECTRONICS CO LTD
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