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Scribing method and scribing device

A technology for scoring wheels and substrates, applied to fine working devices, electrical components, manufacturing tools, etc., can solve problems such as horizontal cracks

Inactive Publication Date: 2019-03-19
MITSUBOSHI DIAMOND IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In this way, when scoring is performed using a conventionally known scoring wheel with a symmetrical blade tip angle, there is the following problem: since the load is applied to the entire vertical direction of the SiC substrate surface that the blade tip contacts, the There is a tendency to easily generate horizontal cracks on one side

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  • Scribing method and scribing device

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Embodiment Construction

[0041] In order to further explain the technical means and effects adopted by the present invention to achieve the intended purpose of the invention, the specific implementation methods, methods, and steps of the marking method and marking device proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , structure, feature and effect thereof, detailed description is as follows.

[0042] figure 1 It is a diagram showing the relationship between the normal line and the crystallographic axis of a wafer formed slightly inclined with respect to the (0001) plane during the production of the SiC wafer. exist figure 1 In the (0001) plane 10, an x-axis which is a crystallographic axis and a y-axis perpendicular thereto are defined in-plane, and the normal thereof is set to 10a. Furthermore, when the normal of the wafer 11 is set to 11a, the normals 10a, 11a form an angle, that is, the inclination angl...

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Abstract

The invention relates to a scribing method and a scribing device capable of preventing horizontal cracks according to a declination angle during manufacturing during the scribing of SiC wafers. When a SiC substrate with the declination angle is scribed vertical to an orientation surface and vertical to a crystallographic axis of the SiC substrate, a scribing wheel with a knife front end angle different relative to the left and right of a knife front end ridge, large knife front end angle positioned at a high position from the perspective of the crystallographic axis, and small angle at the other side is employed to scribe. Therefore, the horizontal cracks can be reduced.

Description

technical field [0001] The present invention relates to a scribing method and a scribing device for scribing to break a silicon carbide substrate (SiC substrate). Background technique [0002] When scribing and breaking a glass substrate, the scribing is performed by applying a load to the scribing wheel and rotating it. Patent Documents 1 and 2 disclose that at this time, a scoring groove is drawn so as to be slightly inclined from the glass surface by changing the blade tip angle of the scoring wheel from left to right. [0003] Since the SiC substrate is a semiconductor excellent in chemical stability, it can be used as a material of electronic components such as light emitting diodes, Schottky diodes, MOSFETs, etc., and can also be used as a substrate of semiconductors. When used as a semiconductor, a cylindrical ingot is produced in the same manner as a general silicon element, and sliced ​​into disk-shaped wafers. After forming a plurality of functional regions on th...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78B28D5/00
CPCH01L21/0445H01L21/3043H01L21/67092H01L21/78
Inventor 村上健二武田真和木下知子
Owner MITSUBOSHI DIAMOND IND CO LTD