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Composite electronic component of film capacitor and zener diode and manufacturing method thereof

A technology of composite electronic components and zener diodes, which is applied in semiconductor/solid-state device manufacturing, capacitors, electrical components, etc., and can solve problems such as functional degradation, incomplete function, and oxidation of electrode materials of zener diodes

Active Publication Date: 2016-12-28
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, these steps are steps requiring high cost
[0020] When forming thin-film capacitors and Zener diodes on a single Si substrate, if the thin-film capacitors are formed first and then the Zener diodes, there are differences depending on the epitaxial growth, the high temperature at which impurity elements diffuse, and the atmosphere when forming the Zener diodes. The problem of deteriorating the thin film capacitance formed earlier
On the contrary, if the Zener diode is formed first and then the thin film capacitor is formed, the semiconductor material and electrode material constituting the Zener diode formed first will be oxidized due to the high temperature exceeding 750°C in the oxygen atmosphere during the heat treatment process when forming the thin film capacitor. , Diffusion, and then Zener diode function degradation and incomplete function
That is, regardless of the order in which the thin film capacitors and Zener diodes are formed, there is a problem that the electronic components formed earlier will be degraded when the subsequent electronic components are formed.

Method used

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  • Composite electronic component of film capacitor and zener diode and manufacturing method thereof
  • Composite electronic component of film capacitor and zener diode and manufacturing method thereof
  • Composite electronic component of film capacitor and zener diode and manufacturing method thereof

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no. 1 Embodiment approach

[0043] Figure 1~4 The composite electronic component 100 of the film capacitor and the Zener diode according to the first embodiment of the present invention is shown. but, figure 1 It is a plan view of the composite electronic component 100. figure 2 Yes means figure 1 A cross-sectional view of the composite electronic component 100 in the XX part. image 3 Yes means figure 1 A cross-sectional view of the composite electronic component 100 in the YY part. Figure 4 It is an equivalent circuit diagram of the composite electronic component 100.

[0044] The composite electronic component 100 includes a p-type Si single crystal substrate 1. As the p-type Si single crystal substrate 1, for example, B doped with a carrier concentration of 5E16cm is used -3 Of the substrate.

[0045] A first SiO is formed on the p-type Si single crystal substrate 1 2 Layer 2. First SiO 2 The layer 2 is formed by, for example, a thermal oxidation method.

[0046] Thin film capacitors 8 and Zener diodes...

no. 2 Embodiment approach

[0084] in Figure 14 Of (A), (B), Figure 15 The composite electronic component 200 of the film capacitor and the Zener diode according to the second embodiment of the present invention is shown. Figure 14 (A) and (B) represent different cross-sections of the composite electronic component 200, respectively. Figure 15 It is an equivalent circuit diagram of the composite electronic component 200.

[0085] In the composite electronic component 100 according to the above-mentioned first embodiment, a B-doped, carrier concentration of 5E16cm is used. -3 However, in the composite electronic component 200 according to the second embodiment, a P-doped, carrier concentration of 2E16cm is used instead of this. -3 Constituted n-type Si single crystal substrate 31.

[0086] In addition, in the composite electronic component 100 according to the first embodiment described above, the n-type ZnO semiconductor thin film is used as the semiconductor thin film layer 13, but in the composite electro...

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Abstract

The composite electronic component (100) is characterized in that: it is equipped with a Zener diode (14) composed of a Si substrate (1), a thin film capacitor (8), a Si substrate (1) and a semiconductor thin film layer (13), the Si substrate (1) The carrier concentration of the semiconductor thin film layer (13) is smaller than the carrier concentration of the semiconductor thin film layer (13).

Description

Technical field [0001] The present invention relates to a composite electronic component in which a film capacitor and a Zener diode are formed on a Si substrate. [0002] In addition, the present invention relates to a method of manufacturing a composite electronic component of the above-mentioned film capacitor and Zener diode. Background technique [0003] In the past, a thin-film capacitor formed by laminating an electrode layer composed of a noble metal electrode material or a conductive oxide material and a dielectric composed of a perovskite-type dielectric material on a Si substrate has been used as a small, large-capacity capacitor. Used widely. [0004] For example, Patent Document 1 (Japanese Patent No. 4525947) discloses a lower electrode layer made of Pt laminated on a Si substrate, made of barium strontium titanate ((Ba, Sr)TiO 3 ; Hereinafter referred to as "BST") composed of a dielectric and an upper electrode layer composed of Pt film capacitor. [0005] The conventi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L29/861H01L29/866H01L29/868
CPCH01L29/866H01L27/0676H01L28/40
Inventor 野村雅信竹岛裕
Owner MURATA MFG CO LTD