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Composite electronic component having thin-film capacitor and zener diode, and manufacturing method for such composite electronic component

A composite electronic component, Zener diode technology, applied in semiconductor/solid-state device manufacturing, capacitors, electrical components, etc., can solve the problems of diffusion, insufficiency, high cost, etc.

Active Publication Date: 2014-09-24
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, these steps are steps requiring high cost
[0020] When forming thin-film capacitors and Zener diodes on a single Si substrate, if the thin-film capacitors are formed first and then the Zener diodes, there are differences depending on the epitaxial growth, the high temperature at which impurity elements diffuse, and the atmosphere when forming the Zener diodes. The problem of deteriorating the thin film capacitance formed earlier
On the contrary, if the Zener diode is formed first and then the thin film capacitor is formed, the semiconductor material and electrode material constituting the Zener diode formed first will be oxidized due to the high temperature exceeding 750°C in the oxygen atmosphere during the heat treatment process when forming the thin film capacitor. , Diffusion, and then Zener diode function degradation and incomplete function
That is, regardless of the order in which the thin film capacitors and Zener diodes are formed, there is a problem that the electronic components formed earlier will be degraded when the subsequent electronic components are formed.

Method used

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  • Composite electronic component having thin-film capacitor and zener diode, and manufacturing method for such composite electronic component
  • Composite electronic component having thin-film capacitor and zener diode, and manufacturing method for such composite electronic component
  • Composite electronic component having thin-film capacitor and zener diode, and manufacturing method for such composite electronic component

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no. 1 Embodiment approach

[0043] Figure 1~4 A composite electronic component 100 of a film capacitor and a Zener diode according to the first embodiment of the present invention is shown. but, figure 1 is a plan view of the composite electronic component 100 . figure 2 yes means figure 1 A cross-sectional view of the composite electronic component 100 of the XX part. image 3 yes means figure 1 A cross-sectional view of the composite electronic component 100 in the Y-Y portion of . Figure 4 is an equivalent circuit diagram of the composite electronic component 100 .

[0044] The composite electronic component 100 includes a p-type Si single crystal substrate 1 . As the p-type Si single crystal substrate 1, for example, a B-doped substrate with a carrier concentration of 5E16 cm -3 the substrate.

[0045] A first SiO is formed on a p-type Si single crystal substrate 1 2 Layer 2. First SiO 2 Layer 2 is formed, for example, by thermal oxidation.

[0046] A thin film capacitor 8 and a Zener ...

no. 2 Embodiment approach

[0084] exist Figure 14 (A), (B), Figure 15 A composite electronic component 200 of a film capacitor and a Zener diode according to the second embodiment of the present invention is shown. Figure 14 (A) and (B) respectively show different cross-sections of the composite electronic component 200 . Figure 15 is an equivalent circuit diagram of the composite electronic component 200 .

[0085] In the above-mentioned composite electronic component 100 according to the first embodiment, a B-doped electronic component with a carrier concentration of 5E16cm is used. -3 p-type Si single crystal substrate 1, but in the composite electronic component 200 according to the second embodiment, instead of this, a p-type Si single crystal substrate 1 with a carrier concentration of 2E16cm is used. -3 An n-type Si single crystal substrate 31 is formed.

[0086] In addition, in the composite electronic component 100 according to the above-mentioned first embodiment, the n-type ZnO semico...

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Abstract

A composite electronic component (100) is provided with a Si substrate (1), a thin-film capacitor (8), and a Zener diode (14) comprising the Si substrate (1) and a semiconductor thin-film layer (13), and the composite electronic component is characterized in that the carrier concentration of the Si substrate (1) is smaller compared to the carrier concentration of the semiconductor thin-film layer (13).

Description

technical field [0001] The present invention relates to a composite electronic component of a thin film capacitor and a Zener diode formed on a Si substrate. [0002] Moreover, this invention relates to the manufacturing method of the composite electronic component of the said film capacitor and a Zener diode. Background technique [0003] Conventionally, thin-film capacitors formed by stacking electrode layers made of noble metal electrode materials or conductive oxide materials and dielectrics made of perovskite-type dielectric materials on Si substrates have been developed as small, high-capacity capacitors. widely used. [0004] For example, in Patent Document 1 (Japanese Patent No. 4525947), a lower electrode layer made of Pt is laminated on a Si substrate, and a barium strontium titanate ((Ba, Sr)TiO 3 ; hereinafter referred to as "BST") composed of a dielectric body and a thin-film capacitor composed of an upper electrode layer composed of Pt. [0005] The conventi...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L29/861H01L29/866H01L29/868
CPCH01L29/866H01L27/0676H01L28/40
Inventor 野村雅信竹岛裕
Owner MURATA MFG CO LTD