Semiconductor composite layer structure and semiconductor packaging structure provided with same
A packaging structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problems of affecting product reliability, affecting process stability, easy peeling of contact pads, etc., to improve the lack of support , Solve easy spalling, improve the effect of stress mismatch
Inactive Publication Date: 2014-10-01
MACRONIX INT CO LTD
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Problems solved by technology
[0003] However, when the conductor layer is used as a contact pad during soldering, due to the soft nature of the wetting layer material, it is easy to cause pad cracking.
The wetting layer is easy to react with the conductor layer, which will easily cause the stress mismatch between the conductor layer and the underlying dielectric layer, making the contact pad easy to peel off (pad peeling)
In this way, it will not only affect the stability of the process, but also affect the reliability of the product
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[0039] Please refer to figure 1 , which shows a schematic cross-section of a semiconductor package structure 10 according to an embodiment of the present invention. Such as figure 1 As shown, the semiconductor package structure 10 includes a substrate 110 composed of a base material 100 and a first conductive layer 120 , a semiconductor composite layer structure 140 , a second conductive layer 160 , a passive layer 180 and wire solder balls 190 . The substrate 100 includes a circuit structure (not shown), and the first conductive layer 120 is disposed on the circuit structure. The substrate 100 may be a silicon substrate or a non-silicon substrate, without limitation.
[0040] The semiconductor composite layer structure 140 is disposed on a substrate 110 having a circuit structure (not shown) and a first conductive layer 120. The semiconductor composite layer structure 140 is, for example, an inter-metal dielectric (IMD) ), may include a plurality of dielectric layers 142 ,...
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The invention discloses a semiconductor composite layer structure and a semiconductor packaging structure provided with the semiconductor composite layer structure. The semiconductor composite layer structure is arranged on a substrate provided with a circuit structure and a first conductive layer, and comprises a plurality of dielectric layers, a first infiltration layer, a solid layer and a second infiltration layer; the dielectric layers are arranged on the substrate at intervals; the first infiltration layer is arranged on the dielectric layers and on the substrate among the dielectric layers; the solid layer is arranged on the first infiltration layer; and the second infiltration layer is arranged on the solid layer and contacted with a second conductive layer.
Description
technical field [0001] The present invention relates to a semiconductor package structure, and in particular to a semiconductor package structure with a special semiconductor composite layer structure. Background technique [0002] In the semiconductor packaging process, the conductive interconnect of the integrated circuit device usually uses the wetting layer to contact the conductor layer. Since the hardness of the wetting layer is relatively soft, and the wetting layer is easy to react with the conductor layer to form a good adhesion, it can be used to reduce interlayer. breakage situation. [0003] However, when the conductor layer is used as a contact pad during soldering, due to the soft nature of the material of the wetting layer, it is easy to cause pad cracking. The property of the wetting layer to easily react with the conductor layer may easily cause a stress mismatch between the conductor layer and the underlying dielectric layer, making the contact pads prone ...
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IPC IPC(8): H01L23/528H01L23/532
CPCH01L24/05H01L2224/04042H01L2224/45015H01L2224/45147H01L2224/48463H01L2924/20752H01L2924/20753H01L2924/00014
Inventor 李明东连士进林孝章曾钦义吴国豪吴锡垣
Owner MACRONIX INT CO LTD