Thin film transistor, display substrate and manufacturing method thereof, and display device
A technology of thin film transistors and manufacturing methods, applied in the fields of thin film transistors, display devices, display substrates and manufacturing methods thereof, capable of solving problems such as stress mismatch between conductive patterns and inorganic insulating film layers, achieving improved stress mismatch and higher yield , reduce the effect of drum kit
Active Publication Date: 2021-11-09
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a thin film transistor, a display substrate and its manufacturing method, and a display device, which can improve the problem of stress mismatch between the conductive pattern and the inorganic insulating film layer, and improve the yield rate of display products
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[0041] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0042] The embodiment of the present invention aims at the stress mismatch between the copper wire and the inorganic insulating film layer in the prior art, and there will be a stress gap between the copper wire and the inorganic insulating film layer, which will cause a high incidence of bulging of the inorganic insulating film layer, and then A series of defects such as DGS will be caused, which will eventually seriously reduce the yield rate of display products. A thin film transistor, a display substrate and its manufacturing method, and a display device are provided, which can improve the stress gap between the conductive pattern and the inorganic insulating film layer. Matching problems, improve the yield rate of display products....
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The invention provides a thin film transistor, a display substrate, a manufacturing method thereof, and a display device, belonging to the field of display technology. Wherein, the manufacturing method of the thin film transistor includes: when forming the inorganic insulating film layer in contact with the electrode of the thin film transistor, depositing the inorganic insulating film layer with a power greater than 9kW, so that the stress value of the inorganic insulating film layer is reduced below the threshold. Through the technical scheme of the invention, the problem of stress mismatch between the conductive pattern and the inorganic insulating film layer can be improved, and the yield rate of display products can be improved.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a display substrate and a manufacturing method thereof, and a display device. Background technique [0002] As the size of thin film transistor displays increases, the problem of RC delay becomes more and more serious. Because copper wire has the characteristics of low resistivity and high electric mobility, it can significantly reduce the delay effect of resistance and capacitance, improve the operating speed of thin film transistors, and meet the requirements of high-end display devices. Therefore, copper wire technology has become the development trend of thin film transistors. [0003] However, many problems will arise in the process of using copper wires. For example, in oxide thin film transistors, it is necessary to deposit an inorganic insulating film layer on the copper wire. The inorganic insulating film layer generally includes silicon nitride,...
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IPC IPC(8): H01L21/443H01L21/34H01L29/423H01L29/51H01L29/786
CPCH01L29/42364H01L29/518H01L29/66969H01L29/7869H01L21/443H01L27/1248H01L29/45H01L27/124H01L21/76834H01L21/0217H01L21/02274H01L21/02315H01L27/1237H01L27/1244H01L27/1262
Inventor 苏同上王东方王庆贺闫梁臣
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD