56results about How to "Reduce stress difference" patented technology

The invention discloses a laser multi-focus dynamic machining method and system, and belongs to the technical field of laser machining application. The method includes the steps that multiple same-optical-axis focus points incoming into a to-be-machined object do back and forth movement at set frequency along the direction of the optical axis, and therefore each laser focus does linear back and forth movement in the thickness direction of the to-be-machined object, and therefore the static point heating manner is converted into linear dynamic heating manner. The invention further provides a device for achieving the above method. A multi-focus derivative system or multi-focusing-lens set is adopted for enabling lasers to form multiple laser focuses in the to-be-machined transparent material. By means of the method, high quality and high efficiency cutting separation of the thicker transparent fragile material can be achieved. The device is relatively simple in structure and easy to control.

The invention discloses an MQW (multiple quantum well)-growth applied GaN (gallium nitride)-based green-light LED (light emitting diode) epitaxial structure, and relates to the technical field of LED epitaxial production, in particular to growth technology of GaN-based green-light LEDs. The MQW-growth applied GaN-based green-light LED epitaxial structure comprises a GaN nucleating layer, a non-mixed GaN layer, a n-type GaN layer, an InGaN (indium gallium nitride)/GaN MQW active layer and a p-type GaN layer which are sequentially grown on a substrate. The InGaN/GaN MQW active layer comprises a GaN barrier layer, an InGaN quantum well layer and a temperature-changing GaN transition layer. A buffering layer shallow well with low In components is grown between the GaN barrier layer and the InGaN quantum well layer of the InGaN/GaN MQW active layer. Stress between a quantum well and a barrier is greatly reduced, and stress difference between the quantum well and the barrier is relieved, so that a polarization electric field in the quantum well is greatly reduced. By the buffering layer shallow well between the barrier and the quantum well, the polarization electric field is reduced, spatial segregation of an electron-hole wave function is relieved, and effective radiative recombination can be improved.

The invention discloses GaN-based green light LED (light-emitting diode) epitaxial structure. The GaN-based green light LED epitaxial structure comprises a sapphire substrate, a buffer layer, a first undoped u GaN layer, a second undoped u GaN layer, a high-temperature nGaN layer, a first low-temperature nGaN layer, an InGaN/GaN electronic storage layer, a second low-temperature nGaN layer, an InxGal-xN/GaN multiple-quantum well layer, an InyGal-yN/GaNMQW luminescent layer, a low-temperature P type GaN layer, a P type AlInGaN layer, a high temperature P type GaN layer and a P type contact layer from bottom to top in sequence. The invention further provides a manufacturing method of the GaN-based green light LED epitaxial structure. The GaN-based green light LED epitaxial structure can be used for solving the problems of greatened lattice mismatch, strengthened polarization effect and poor crystal quality in the MQW structure of the GaN-based light emitting diode, improving the internal quantum efficiency of the internal quantum well and obviously improving the luminous efficiency of the LED apparatus.

The invention discloses a stamping part side wall curled rebounding control stamping device which comprises an upper die base, a concave die, a blank holder, a convex die and a lower die base from top to bottom, wherein the blank holder is in driving connection with a holder-on rod; the convex die is matched with the concave die; the upper die base is fixedly connected with the concave die and moves synchronously with the concave die; the convex die is fixedly connected with the lower die base; the convex die comprises a first stamping part and a second stamping part from top to bottom; the first stamping part and the second stamping part are in smooth transition by virtue of a transition curve part; a clearance between the outer contour of the side wall of the first stamping part and the side wall of the concave die is 1.2-1.6 times of the thickness of a to-be-stamped plate; a clearance between the outer contour of the side wall of the second stamping part and the side wall of the concave die 2 is 0.8-0.9 times of the thickness of the to-be-stamped plate; the projection length of the transition curve part in the stamping direction is 2-3 times of the thickness of the to-be-stamped plate. According to the stamping part side wall curled rebounding control stamping device, the die clearance is changed during a stamping process, so that the stress difference between inner and outer layers of a material is decreased, side wall curled rebounding of parts is effectively controlled, and the formation precision and quality of the parts are improved.

The invention discloses a comprehensive structure prestress reinforcing method on the basis of the influence line theory. The comprehensive structure prestress reinforcing method includes steps of analyzing by means of the influence line theory in the structural mechanics, temporarily adjusting (loading or deloading) the internal force within a certain area in an influence line to change the state of the internal force or the stress within a section to be reinforced; reinforcing the section to be reinforced; finally, stopping temporary adjustment of the internal force to actively adjust the stress distribution of the reinforced combined section after the strength of the reinforcing layer is achieved and new and used materials are effectively combined, so that the 'stress difference' of the reinforced new and used materials stays reasonable and perfect reinforcing effect is realized. The comprehensive structure prestress reinforcing method is novel in concept and utilizes the influence line theory skillfully to temporarily adjust the internal force of the section to be reinforced before reinforcing, so that the reinforced concrete is prepressed or pretensioned (structural prestress), the stress difference of new and used concrete is reduced and stress performance of the reinforced combined section is improved.

The invention provides an air cooling device for tempered glass and relates to the field of glass cooling. The air cooling device comprises drive rollers, upper air grids located above the drive rollers and lower air grids located below the drive rollers, wherein an air baffle for preventing air from blowing downwards is arranged below each drive roller and arranged between adjacent lower air grids, a longitudinal exhaust pipe is fixed at the upper end of the air baffle and fixed on the side surface of the corresponding lower air grid, and two ends of the exhaust pipe are open; multiple vertically transverse partitions are arranged on each air baffle longitudinally, so that multiple cooling units which are only open at upper ends are formed by the partitions with the lower air grids, the exhaust pipes and the air baffles; each exhaust pipe is provided with an air inlet in the corresponding cooling unit, and the lower air grids blow glass for cooling; air cushions are formed by air accumulation in each cooling unit, air in the cooling units can be discharged from the exhaust pipes through the air inlets instead of blowing to two sides along the two lower air grids, so that the longitudinal cooling effect on the glass is uniform, and stress difference caused by non-uniform cooling is reduced.

The invention provides a composite material brake disc. The composite material brake disc comprises a base body layer playing a role in bearing and a composite layer providing friction braking force,the base body layer and the composite layer are combined with each other in a metallurgical bonding mode, a transition layer is generated at the interface where the base body layer and the composite layer are combined with each other, and a reinforcing structure for connecting the base body layer and the composite layer is formed in the transition layer. According to the composite material brake disc, on one hand, the volume fraction of reinforced particles of the composite layer is increased, the abrasion resistance is improved, ceramic particles are prevented from being added into the base body layer, the strength and the elongation of the base body layer are improved, the failure risk is reduced, the heat conduction capacity of the base body layer is improved, heat generated by the friction layer is transferred into air, and the overall temperature rise of the brake disc is reduced; and on the other hand, compared with the prior art that an aluminum alloy base body layer and an abrasion-resisting layer are connected in a mechanical bonding mode, the composite material brake disc generates the transition layer between the base body layer and the composite layer in the metallurgical bonding mode, the bonding force between the base body layer and the composite layer is improved, and the risk of failure such as cracking between the composite layer and the base body layer in thecold and hot fatigue process is reduced.

The invention discloses a method for preparing a surface coating of nickel-titanium alloy medical equipment. The method comprises the following steps that (1) impulse negative bias is loaded, and titanium ions are injected, so that a titanium transition layer is formed; and (2) under the condition that impulse negative bias and titanium injection are kept, nitrogen is pumped in with flow being instep increase from 0 to 20 sccm, a titanium-titanium nitride gradient transition layer is formed, and finally a pure titanium nitride layer is formed. The invention further discloses the nickel-titanium alloy medical equipment with the surface coating. The surface coating comprises the titanium transition layer, the titanium-titanium nitride gradient transition layer and the pure titanium nitridelayer from inside to outside; and content of titanium nitride is evenly increased in a gradient mode in the titanium-titanium nitride gradient transition layer.

The invention discloses a semiconductor device and a preparation method thereof. The preparation method comprises the following steps: providing a semiconductor substrate; forming a dielectric layer and a stress buffer layer on the semiconductor substrate in turn; etching the dielectric layer and the stress buffer layer; depositing a first metal layer; etching the first metal layer, and then carrying out an annealing process; and preparing a passivation layer on the first metal layer to form a semiconductor device. The stress coefficient of the stress buffer layer is between the stress coefficient of the first metal layer and the stress coefficient of the dielectric layer. It is observed that the stress buffer layer is arranged between the first metal layer and the dielectric layer. As the stress coefficient of the stress buffer layer is between the stress coefficient of the first metal layer and the stress coefficient of the dielectric layer, the stress buffer layer can effectively buffer the stress difference produced between the first metal layer and the dielectric layer in the annealing process. Therefore, defects such as metal loss caused by annealing can be avoided effectively, and the yield and performance of the semiconductor device are improved.

The embodiment of the invention discloses a supporting plate and a display device. The supporting plate is characterized in that a plurality of through holes are formed in a first region (namely a bending region), and a plurality of first grooves which are distributed in a first surface of a supporting plate body at intervals and a plurality of second grooves which are distributed in a second surface of the supporting plate body at intervals are formed in the transition region; and a stress difference between the first region and the second region(the supporting region) can be reduced so that stress generated during bending is distributed more uniformly, the problem of stress concentration at the junction of the bending region and the supporting region in the prior art can be effectively solved, cracks are prevented from being generated at the joint of the bendingregion and the supporting region, and the supporting piece is effectively prevented from being broken. According to the scheme, the weight of the supporting plate can be reduced, the rigidity of the supporting plate is reduced, the bending capacity of the supporting plate is improved, and therefore the reliability of the supporting plate is improved.

The invention relates to the field of coal chemical industry, in particular to formed coke and a preparation method and application thereof. The preparation method of the formed coke comprises the following steps: (1) pressing mixed coal obtained by mixing raw materials to obtain formed coal; based on the total weight of the raw materials, the raw materials comprise 15-25 wt% of coke powder, 60-70wt% of fat coal and 5-15 wt% of anthracite; and (2) putting the formed coal into a coke oven at room temperature, heating the coke oven from room temperature to 1000-1200 DEG C at a rate of 6-10 DEGC/h, and carrying out destructive distillation at 1000-1200 DEG C for 380-480 h to obtain the formed coke. The formed coke obtained in the invention has the advantages of few internal cracks, large lumpiness, high thermal strength and low ash content so that the formed coke has a wide application prospect.

The invention discloses a dustproof structure, a microphone packaging structure and electronic equipment. The dustproof structure comprises a carrier and a grid part, wherein the grid part comprises afilter screen and a fixing part arranged around the filter screen; the carrier is of a hollow structure, and a pore channel structure extending in the thickness direction of the carrier is arranged on the carrier; and the grid part is arranged at one end of the carrier and covers the hollow structure, the filter screen is opposite to the hollow structure, and the fixing part is connected with thecarrier. One technical effect of the dustproof structure is that the filter screen on the grid part can be kept in a flat state, and the grid part can effectively prevent external particles and foreign matters from entering the microphone packaging structure.

The invention belongs to the technical field of coal mine underground roadway support, and particularly relates to a rock burst pressure relief and danger relief method. The method comprises a roadway bifurcation section, wherein an abdicating energy absorption support mechanism is arranged inside the roadway bifurcation section; a shallow surface surrounding rock anchor net support ring is built on the outer wall of the abdicating energy absorption support mechanism; the abdicating energy absorption support mechanism comprises an O-shaped steel shed frame, pressure decomposition pressure relief layers and pressure division toughness tubes; the pressure decomposition pressure relief layers and the pressure division toughness tubes are respectively provided with a plurality of layers and are distributed at intervals; the pressure decomposition pressure relief layer consists of a plurality of arc-shaped buffer pressure division steel plates in fish scale-shaped distribution; the impact energy abdicating absorption is realized through the arranged abdicating energy absorption support mechanism; the rock burst destructiveness is weakened; meanwhile, the arranged arc-shaped buffer pressure division steel plates are matched with the pressure division toughness tubes for dispersing the pressure to the whole O-shaped steel shed frame; the O-shaped steel shed frame is sufficiently utilized; and the whole support system collapse due to local instability of the support system is avoided.

The invention provides a display backboard, a manufacturing method thereof and a display device. In the display backboard, a light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer, at least part of the light-emitting structure is located in an opening of a pixel definition layer, and the first electrode layer is arranged close to a substrate; the isolation structure is located on the side, away from the opening, of the pixel definition layer; one part of the second electrode layer extends to the side surface, close to the pixel definition layer, of the isolation structure from the opening of the pixel definition layer along the pixel definition layer through a gap between the pixel definition layer and the isolation structure, and the second electrode layer is electrically connected to the isolation structure; the light-emitting layer is not connected at the gap between the pixel definition layer and the isolation structure; in the direction perpendicular to the substrate, the height of the isolation structure is larger than that of the first electrode layer. The thickness of the first electrode layer is small, the problem that a metal film layer of the reflection first electrode layer swells or falls off can be smoothly solved, and then the display effect and the product yield of the product are remarkably improved.

The invention belongs to the technical field of metal pressure machining processes, and particularly discloses a forging production process of a 30Cr15MoN high-nitrogen martensitic stainless steel bar, which comprises the steps of electroslag remelting, heating, forging preparation, forging and red annealing. According to the method, the problems that 30Cr15MoN steel in an existing forging processis prone to cracking and uneven in structure are effectively solved by combining the optimized forging mode that drawing is directly conducted without upsetting and an eight-edge four-method is adopted for drawing with strict temperature control, meanwhile, the forging heating number is reduced, and the production efficiency is improved; The steel bar forged through the method is excellent in performance in all aspects and can meet the material requirements of high-precision sharp-end projects.

The invention discloses a flexible display panel and a preparation method thereof, and a flexible display device. The display panel includes a flexible substrate, a pixel definition layer which is arranged on the flexible substrate and is provided with a plurality of openings internally provided with light emitting structure layers, and a film packaging layer, wherein the film packaging layer comprises a first inorganic packaging layer and a first organic packaging layer which are arranged in a stacked manner, the first inorganic packaging layer is located above the light emitting structure layers in the openings of the pixel definition layer, and the first organic packaging layer covers the pixel definition layer and the first inorganic packaging layer and is in direct contact with an upper surface of the pixel definition layer. The display panel is advantaged in that the stress between an organic electroluminescent device layer and the film packaging layer can be improved, so a problem that the film layers are easy to separate when the flexible display panel is bent is solved.

The present invention relates to a manufacturing method of a thin-film structural body which is formed by using a semiconductor processing technique, and an object thereof is to provide a manufacturing method of a thin-film structural body, capable of reducing a stress difference exerted between a sacrifice film and a substrate upon thermal shrinkage.In order to achieve this object, a sacrifice film (51), which is formed on a substrate (1), is formed by using a PSG film in which the concentration of phosphorus is set to a value which is greater than 3 mol %, and also smaller than 4 mol %. After a thin-film layer (53) has been formed thereon and after the thin-film layer (53) has been patterned, the sacrifice film (51) is removed by an etching process.

Disclosed is a vertical production line of cables for new energy electric vehicles. The vertical production line comprises a pay-off reel, a first traction machine, an extruder, a vulcanizing device,a second traction machine and a take-up reel which are installed in sequence, the vulcanizing device comprises an ascending vulcanizing section, a descending vulcanizing section and a reversing wheel,the ascending vulcanizing section and the descending vulcanizing section each comprise at least two vulcanizing pipes, each vulcanization pipe further comprises two vulcanization pipe units, and a preheater is installed between the ascending vulcanizing section and the extruder. According to the invention, the vulcanizing device is divided into the vertically arranged ascending vulcanizing section and descending vulcanizing section, so that rubber on a conductor does not generate an eccentric effect on the conductor under the action of gravity, the ascending vulcanizing section or descendingvulcanizing section is divided into a plurality of vulcanizing pipes arranged at intervals, the heating temperature of different vulcanizing pipes is controlled, and adjustment is carried out according to different vulcanization states of different parts, so that the overall vulcanization quality and vulcanization efficiency of cables are improved, and the forming quality of the cables is improved.

The invention relates to the technical field of stamping, in particular to a manufacturing method of a stamping formed part, and the stamping formed part. The manufacturing method comprises the steps of die adjusting, stamping and die copying, and a used stamping die comprises an upper die holder, a lower die holder and a controller; due to the fact that the deformation condition of a board in the forming process is complex and is changed with contact between the board and a die surface, main stress parameters in the board surface of each part of a blank are further dynamically changed, and consequently drawing defects generated in the stamping process are difficult to prejudge; and the quality of a formed part is affected. Therefore, a quick connector is arranged and used for fixedly connecting an insert; insert parameters for stamping the formed part are easy to adjust, and stress difference of the insert acting on different parts of the formed part in the stamping process is adjusted by the aid of a bagged spring mounted at the tail end of the insert; the stress difference borne by drawing of the formed part is reduced through the deformation quantity of the bagged spring; and the surface quality of the formed part is maintained, and therefore the manufacturing quality of the stamping formed part is improved.

The invention relates to an enhanced free-spraying profile without scratches. The profile is prepared by adopting a first mixture as an inner layer, and the second mixture as an outer layer through performing coextrusion molding; the first mixture is prepared from 100 parts of PVC (polyvinyl chloride), 20 to 30 parts of activated calcium carbonate, 5 to 10 parts of glass fibre, 2 to 4 parts of stabilizer, 0.1 to 2 parts of antioxidant, 5 to 10 parts of zinc stearate, 1 to 5 parts of mica powder, 2 to 5 parts of PE (polyethylene), 0.5 to 2 parts of tungsten oxytetrachloride, 4 to 8 parts of 2-pentene, 4 to 8 parts of cyclopentene and 2 to 10 parts of PMMA (polymethyl methacrylate); the second mixture is prepared from100 parts of PMMA, 20 to 30 parts of activated calcium carbonate, 1 to 4 parts of light stabilizer, 2 to 5 parts of PE, 0 to 4 parts of PVC and 15 to 30 parts of toner. According to the enhanced free-spraying profile without scratches and the preparation method of the enhanced free-spraying profile, the formula of the mixture of the PVC inlayer and the PMMA outer layer is improved, and the strength of the co-extruded profile PVE inner layer is improved, so that the whole strength of a final product is improved.

The invention discloses a forming method of a semiconductor device, and the method comprises the following steps: providing a semiconductor substrate; forming a stacking layer of a HfO2 thin film anda first pressure stress thin film on a surface of the semiconductor substrate; and performing annealing for the semiconductor substrate and the stacking layer through a first annealing technology. Themethod provided by the scheme of the invention is helpful for reducing possibility of generating a peeling off phenomenon of the HfO2 thin film when bearing high stress, and thus, quality of the semiconductor device can be improved.