The invention discloses GaN-based
green light LED (light-emitting
diode) epitaxial structure. The GaN-based
green light LED epitaxial structure comprises a
sapphire substrate, a buffer layer, a first undoped u GaN layer, a second undoped u GaN layer, a high-temperature nGaN layer, a first low-temperature nGaN layer, an InGaN / GaN electronic storage layer, a second low-temperature nGaN layer, an InxGal-xN / GaN multiple-
quantum well layer, an InyGal-yN / GaNMQW luminescent layer, a low-temperature P type GaN layer, a P type AlInGaN layer, a high temperature P type GaN layer and a P type
contact layer from bottom to top in sequence. The invention further provides a manufacturing method of the GaN-based
green light LED epitaxial structure. The GaN-based green light LED epitaxial structure can be used for solving the problems of greatened
lattice mismatch, strengthened polarization effect and poor
crystal quality in the MQW structure of the GaN-based
light emitting diode, improving the internal
quantum efficiency of the internal
quantum well and obviously improving the luminous efficiency of the LED apparatus.