MQW (multiple quantum well)-growth applied GaN (gallium nitride)-based green-light LED (light emitting diode) epitaxial structure

Abstract

The invention discloses an MQW (multiple quantum well)-growth applied GaN (gallium nitride)-based green-light LED (light emitting diode) epitaxial structure, and relates to the technical field of LED epitaxial production, in particular to growth technology of GaN-based green-light LEDs. The MQW-growth applied GaN-based green-light LED epitaxial structure comprises a GaN nucleating layer, a non-mixed GaN layer, a n-type GaN layer, an InGaN (indium gallium nitride)/GaN MQW active layer and a p-type GaN layer which are sequentially grown on a substrate. The InGaN/GaN MQW active layer comprises a GaN barrier layer, an InGaN quantum well layer and a temperature-changing GaN transition layer. A buffering layer shallow well with low In components is grown between the GaN barrier layer and the InGaN quantum well layer of the InGaN/GaN MQW active layer. Stress between a quantum well and a barrier is greatly reduced, and stress difference between the quantum well and the barrier is relieved, so that a polarization electric field in the quantum well is greatly reduced. By the buffering layer shallow well between the barrier and the quantum well, the polarization electric field is reduced, spatial segregation of an electron-hole wave function is relieved, and effective radiative recombination can be improved.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial production, in particular to the growth technology of GaN-based green LEDs. Background technique [0002] Green LEDs have quietly emerged in the market, with a wide range of applications, including large indoor and outdoor billboards, traffic lights, backlight (computer, mobile phone display), portable lighting systems, fixed color lighting systems, optical access systems, etc. . The market share of products related to green light is also expanding year by year, and the market has higher and higher requirements for the performance of green light LEDs. How to obtain green LEDs with high brightness and high antistatic ability has become a hot research topic now. One of the most important criteria to measure its overall performance is the external quantum efficiency (EQE) of LEDs. External quantum efficiency is the ratio of the number of photons emitted to the outside per unit time to the nu...

AI Technical Summary

Problems solved by technology

This means that a lower growth temperature is required during the growth of the green well, which will lead to poorer lattice quality and degrade its performance; during the growth of the green well, the well and the barrier have a larger The lattice difference, which will lead to more serious lattice mismatch, more serious polarization effect, more serious space separation phenomenon of electron-hole wave function

Therefore, compared with blue LEDs, the radiation recombination efficiency of green LEDs will decrease.

Images