Power semiconductor device
A technology of power semiconductors and devices, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as interruption of power semiconductor devices and failure of power semiconductor devices to work normally
Active Publication Date: 2014-11-05
ZHUZHOU CRRC TIMES SEMICON CO LTD
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[0003] However, during use, if the chip fails, there will be an open circuit between the first electrode and the second electrode, making the power semiconductor device unable to work normally
In this way, the operation of the equipment using the power semiconductor device will be interrupted, and even a series of other problems or losses will be caused.
[0004] Therefore, how to solve the problem that the power semiconductor device cannot work normally after the chip fails is a technical problem that those skilled in the art need to solve
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[0022] The present invention will be further described below in conjunction with accompanying drawing.
[0023] Such as figure 1 and figure 2 As shown, the power semiconductor device provided by the present invention includes a first electrode 1, a second electrode 2, a first molybdenum sheet 3 and a second molybdenum sheet 4 arranged between the first electrode 1 and the second electrode 2, and the A chip 5 between the first molybdenum sheet 3 and the second molybdenum sheet 4 . Specifically, one of the first electrode 1 and the second electrode 2 is a cathode, and the other is an anode. The power semiconductor device is especially suitable for a flat press-fit package power device, such as a press-fit IGBT (Insulated Gate Bipolar Transistor) module.
[0024] The planar crimping package power device means that the chip 5 , the first electrode 1 , the second electrode 2 , the first molybdenum sheet 3 and the second molybdenum sheet 4 are all directly connected by pressure....
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The invention relates to a power semiconductor device which comprises a first electrode, a second electrode, a chip arranged between the first electrode and the second electrode and a bypass conduction unit arranged between the first electrode and the second electrode, the bypass conduction unit comprises a conductive element and a fixed element, the fixed element is configured to prevent the conductive element from being conducted with the first electrode and the second electrode during normal working of the chip and remove the prevention on the conductive element after the chip is out of work due to heating expansion, so that the first electrode is conducted with the second electrode via the conductive element. After the chip is out of work, the first electrode and the second electrode can be conducted via the bypass conduction unit, therefore, the power semiconductor device can still normally work even if the chip is out of work.
Description
technical field [0001] The invention relates to a power semiconductor device. Background technique [0002] Power semiconductor devices are also called power electronic devices. It is mainly used in power conversion and control circuits of power equipment. The power semiconductor device in the prior art includes a first electrode, a second electrode, a first molybdenum sheet and a second molybdenum sheet arranged between the first electrode and the second electrode, and a molybdenum sheet arranged between the first molybdenum sheet and the second molybdenum sheet chip between slices. [0003] However, during use, if the chip fails, there will be an open circuit between the first electrode and the second electrode, so that the power semiconductor device cannot work normally. In this way, the operation of the equipment using the power semiconductor device will be interrupted, and even a series of other problems or losses will be caused. [0004] Therefore, how to solve the...
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Login to View More IPC IPC(8): H01L23/58
CPCH01L2224/33H01L2924/13055H01L2924/00
Inventor 窦泽春肖红秀李继鲁方杰常桂钦刘国友彭勇殿
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD