Phase change memory driving circuit and method
A phase-change memory and drive circuit technology, applied in the field of microelectronics, can solve the problem of high power consumption of the storage unit of the phase-change memory, slow phase change speed of the drive circuit of the phase-change memory, and inability to effectively generate picosecond current pulse phase-change materials Issues such as picosecond-level phase change, to achieve the effect of reducing power consumption and increasing the speed of phase change
Active Publication Date: 2017-10-03
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology
[0003] The present invention provides a phase change memory driving circuit and method, aiming to solve the problem that the existing phase change memory driving circuit has a slow phase change speed and cannot effectively generate picosecond level current pulses to realize the picosecond level phase change of phase change materials. change, leading to the technical problem of high power consumption of the storage unit of the phase change memory
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[0025] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0026] See figure 1 , Is a schematic structural diagram of a phase change memory driving circuit according to an embodiment of the present invention. The phase change memory drive circuit of the embodiment of the present invention includes an ordinary pulse source, a control switch, a picosecond pulse generator, a gate and a phase change resistor. The ordinary pulse source, the control switch are connected, the picosecond pulse generator, the gate, and the phase change resistor are connected in sequence, and one end of the ordinary pulse source and the phase change resistor are grounded respe...
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The invention relates to a driving circuit and method of a phase change memory. The phase-change memory drive circuit of the present invention includes: an ordinary pulse source, a control switch, a gating device, a phase-changing resistor and a picosecond pulse generator. The device and the phase change resistor are connected in sequence, and the picosecond pulse generator shapes the pulse generated by the common pulse source into a picosecond-level set / reset current pulse. The phase-change memory drive circuit and method of the embodiment of the present invention output a picosecond-level set or reset current pulse through a picosecond pulse generator composed of a step recovery diode, which greatly improves the phase change without consuming chip area. The phase change speed of the memory makes the phase change speed reach the order of picoseconds, which greatly reduces the power consumption of the entire device.
Description
Technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a phase change memory drive circuit and method. Background technique [0002] Phase change memory, as a non-volatile memory, is used to replace flash memory that can no longer be integrated. Each storage unit of a phase change memory generally includes a memory and a drive circuit. Through the current pulse provided by the drive circuit, the phase change material in the memory changes from a crystalline state to an amorphous state, and vice versa. The phase change material in the memory may include alloys of germanium, antimony, and tellurium. The drive circuit is usually composed of a diode or a metal oxide field effect (MOS) transistor. When the phase change material in the memory changes from a low-resistance state (crystalline state) to a high-resistance state (amorphous state), a current large enough to melt the phase-change material needs to flow through th...
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IPC IPC(8): G11C13/00
Inventor 程国胜王龙孔涛卫芬芬黄荣张杰
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI