Preparation method of low temperature polysilicon film

Abstract

A method for preparing the low temperature ploy-silicon film, which includes the following steps: providing a substrate; forming an amorphous silicon layer on the substrate; forming a silicon oxide layer on the amorphous silicon layer by a plasma process; and performing a laser crystallizing process to the amorphous silicon layer. An embodiment of the present invention prepares the silicon oxide film in the low temperature ploy-silicon film by the plasma enhanced chemical vapor deposition process, which improves the overall uniformity of the silicon oxide film and owns a preferred roughness surface.

Description

technical field [0001] The invention relates to a method for manufacturing a photoelectric device, in particular to a method for preparing a low-temperature polysilicon film. Background technique [0002] Low Temperature Poly-Silicon (LPTS for short) is a branch of polysilicon technology. Currently, for display technology, it is developing towards thinner and smaller. For LCD devices, the use of polysilicon materials has many advantages, such as thin film circuits can be made thinner, smaller, and lower energy consumption. However, polysilicon requires an annealing process during manufacture to change the amorphous silicon structure into a polysilicon structure. In the traditional annealing process, since the temperature will exceed 1000°C, and the glass substrate will soften and melt at a high temperature of 1000°C, Therefore, in this context, low-temperature polysilicon technology came into being. [0003] The annealing process in the low-temperature polysilicon process...

AI Technical Summary

Problems solved by technology

[0008] It can be seen that the current industry does not have very effective countermeasures for the above-mentioned problems.

Images