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259results about How to "Will not cause pollution" patented technology

Water-based type environment protection cleaning agent and preparation method thereof

The invention relates to a water based environment-friendly cleaning agent and the preparation method, which is characterized in that the agent comprises natural plant extract, degradable surface active agent, inhibiter and de-ionized water. The preparation method is as follows: (1) preparing materials according to the weight ratio, (2) adding the raw material orderly in series, (3) stirring at even pace and (4) evenly mixing to make the finished cleaning agent ultimately. The preparation method for the water based environment-friendly cleaning agent has the advantages of scientific prescription, simple production technique, strong cleaning ability, short cleaning time, low labor and man-hour, high work efficiency, low causticity to the equipment, good safety and low equipment cost. The water based environment-friendly cleaning agent is degradable liquid and can be biologically degraded into harmless material in nature completely. The waste liquid after be cleaned cab be directly discharged without polluting the environment and reach the sewage discharge standard. The water based environment-friendly cleaning agent is provided with the surface active agent and the inhibiter which can form a rustproof protecting film on the metal surface after cleaning, and ensures that the part after cleaning has an advantage of good rust protection.
Owner:北京凯兰航空技术有限公司

Foundation pit groundwater recharging system

ActiveCN105625295AConstant water levelWill not cause deterioration of water qualitySoil preservationWater storage tankWater quality
The invention discloses a foundation pit groundwater recharging system. The foundation pit groundwater recharging system comprises a back wash unit, a water pumping well, a one-level water storage tank, an aeration unit, a one-level filter, a two-level filter, a two-level water storage tank and a recharge well. The water pumping well, the one-level water storage tank, the aeration unit, the one-level filter, the two-level filter, the two-level water storage tank and the recharge well are sequentially connected. The back wash unit is connected with the one-level filter and the two-level filter. The foundation pit groundwater recharging system further comprises a control treatment unit and a water level monitoring unit which is connected with the water pumping well, the two-level water storage tank and the recharge well. The control treatment unit comprises a water pumping control subunit connected with the water pumping well, a water treatment control subunit connected with a recharge water quality treatment system and a recharge and flow control subunit connected with the recharge well. According to the foundation pit groundwater recharging system, the effect that land subsidence surrounding a foundation pit due to rainfall is avoided can be ensured, and meanwhile, optimization of recharge water quality is further really achieved. After recharge of recharge water is finished, drop of the water level of regional groundwater, water quality reduction and pollution do not occur, blocking of the recharge well is also avoided, and the recharge effect is good.
Owner:SHANGHAI CHANGKAI GEOTECHN ENG

Novel self-assembly method of ordered Ge/Si quantum dot array by nano-pore replication and sputtering deposition

The invention provides a method of self-assembly growth of a large-area, even and ordered Ge quantum dot array on a Si substrate by sputtering deposition. The method includes preparation of ultrathin Si-based AAO (anodic aluminum oxide), preparation of a pattern substrate by nano-pore replication, and self-assembly growth of the even, ordered Ge quantum dot array on the surface of the pattern substrate by ion beam sputtering. Quantum dot growth process matching with the pattern substrate is obtained by controlling ion beam sputtering deposition temperature, ion beam flux voltage, and buffer layer thickness, so that Ge quantum dot nano-pores evenly and orderly grow at nucleation center. Even-size Ge quantum dots obtained are in hexagonal symmetrical distribution on the surface of the Si substrate, and the diameter of the quantum dots is adjustable. The method effectively overcomes the defects that distribution of the self-assembled Ge/Si quantum dots is random and disorder in position, the size is uneven, controllability is low, and preparation cost is high. The large-area, even, ordered and small-sized Ge quantum dot array is prepared at low cost. The method is applicable to manufacture of devices such as silicon-base quantum-dot light emitters, quantum-dot photoelectric detectors and efficient quantum-dot solar cells.
Owner:YUNNAN UNIV

Method for extracting vanadium from vanadium-titanium magnetite concentrates

The invention belongs to the field of hydrometallurgy and in particular relates to a method for extracting vanadium from vanadium-titanium magnetite concentrates. The method comprises the following steps of: 1) carrying out acid dissolution and leaching on vanadium-titanium magnetite concentrates and hydrochloric acid at 100-150 DEG C, and filtering the solution to obtain an acid leaching solution; 2) calcining the acid leaching solution obtained in the step 1) to obtain an iron-vanadium solid material and hydrochloric acid; 3) putting the iron-vanadium solid material obtained in the step 2) in an alkali solution, and stirring, filtering and washing to obtain an iron-containing solid material and a vanadium-containing alkali solution; and 4) evaporating and concentrating the vanadium-containing alkali solution obtained in the step 3), then repeating the step 3), and carrying out cooling crystallization to extract a vanadate crystal when the concentration of vanadate in the alkali solution is 10-30g/L. The method has the advantages that the problems of high energy consumption caused by multiple high-temperature roasting in a method for extracting vanadium through sodium (calcium) roasting, three-waste pollution caused in the roasting processes and the like are avoided; and the recovery rate of vanadium is greatly increased.
Owner:INST OF PROCESS ENG CHINESE ACAD OF SCI
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