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Structure and method for integrated synaptic element

An interconnection structure and metal wire technology, applied in the direction of electrical components, semiconductor devices, electrical solid state devices, etc., can solve the problem of increasing the steady state, limited resistance contrast, etc.

Active Publication Date: 2014-12-03
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

STT junctions provide variable resistance, but they tend to relax to their ground state, which increases the problem of steady state
Furthermore, in an STT junction, the resistance contrast between the two steady states is very limited

Method used

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  • Structure and method for integrated synaptic element
  • Structure and method for integrated synaptic element
  • Structure and method for integrated synaptic element

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Embodiment Construction

[0021] Although the invention has been illustrated and described in preferred embodiments, the invention can be made in many different configurations. Preferred embodiments of the invention are depicted in the drawings and will be described herein in detail, where this disclosure is considered exemplary of the principles of the invention and associated functional illustrations of its concepts and is not intended to limit the invention to what is shown Example. Numerous other possible variations within the scope of the invention will envision those skilled in the art.

[0022] To make systems that can mimic brain function, the key is to demonstrate materials that perform the basic function of synapses, which regulate the flow of information from one neuron to another. A synaptic connection between any two neurons is characterized by its ability to adjust its electrical resistance in response to the sequence and timing of firing of pre- and post-synaptic neurons. The fact that...

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Abstract

Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.

Description

technical field [0001] The present invention relates generally to the field of interconnect structures. More specifically, the present invention relates to novel interconnect structures having voids whose dimensions can be varied in response to electromigration, and methods for their use. Background technique [0002] Non-Von-Neumann computing architectures show significant promise for providing significantly faster ways to solve certain classes of problems. Synaptic elements provide one of many ways to create non-von Neumann architectures. Any material exhibiting at least two resistive states could in principle provide a path to mimic a synaptic element between any two neurons. However, materials exhibiting only bistability offer only limited architectural possibilities. Ideally, materials capable of changing stable resistive states multiple times or continuously would provide the greatest design flexibility and come closer to allowing the learning or adaptation function...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L23/532H01L21/768
CPCH01L2924/0002H01L23/5228H01L23/525H01L2924/00
Inventor L·A·克莱文格C·纳拉延G·A·诺索普C·J·拉登斯B·C·萨普
Owner INT BUSINESS MASCH CORP