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Fast and Rigorous Simulation Method for Diffraction Spectra of Defective Masks in Extreme Ultraviolet Lithography

A technology of extreme ultraviolet light and simulation method, which is applied to microlithography exposure equipment, photolithography process exposure devices, instruments, etc., can solve the problems of large amount of calculation, slow calculation speed, unfavorable mask simulation calculation and data statistical analysis, etc.

Active Publication Date: 2016-08-24
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

The prior art mainly obtains the accurate mask diffraction field distribution by calculating Maxwell’s equations, which has a large amount of calculation and slow calculation speed, which is not conducive to large-area mask simulation calculation and data statistical analysis

Method used

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  • Fast and Rigorous Simulation Method for Diffraction Spectra of Defective Masks in Extreme Ultraviolet Lithography
  • Fast and Rigorous Simulation Method for Diffraction Spectra of Defective Masks in Extreme Ultraviolet Lithography
  • Fast and Rigorous Simulation Method for Diffraction Spectra of Defective Masks in Extreme Ultraviolet Lithography

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Embodiment Construction

[0055] The present invention will be further described below in conjunction with embodiments and drawings, but this embodiment should not limit the protection scope of the present invention.

[0056] See first figure 1 with figure 2 , figure 1 It is a schematic diagram of the basic structure of a defect-containing mask for extreme ultraviolet lithography used in the present invention, which mainly includes a mask absorbing layer 1, a defect-containing multilayer film 2 and a substrate 3. figure 2 It is the basic principle and structural schematic diagram of the fast and strict simulation model of the present invention, in which the defects in the defect-containing multilayer film 2 are Gaussian defects, and the substrate defect height is 40nm, the full width at half maximum is 40nm, and the surface defect height is 5nm, half-peak The full width is 90 nm, the mask absorption layer 1 is modeled by the equivalent thin mask model 4, and the defect-containing multilayer film 2 is mo...

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Abstract

The invention relates to a quick strict simulation method for a extremely ultraviolet photoetching mask diffraction spectrum containing a defect . The method comprises the following steps: dividing a multilayer film containing defects into a no-defect part and a defect part, and modeling by a partition method and an equivalent film layer method; during modeling, firstly, obtaining a mask absorption layer diffraction spectrum through thin mask proximity and phase compensation, and then, through the diffraction of the multilayer film containing the defects, finally obtaining the extremely ultraviolet photoetching mask diffraction spectrum containing the defect through the thin mask proximity and the phase compensation. The invention provides the quick strict simulation method which can quickly and effectively simulate the extremely ultraviolet photoetching diffraction spectrum containing the defect mask.

Description

Technical field [0001] The invention relates to an extreme ultraviolet lithography mask, in particular to a fast and strict simulation method for the diffraction spectrum of an extreme ultraviolet lithography mask containing defects. Background technique [0002] Extreme ultraviolet (EUV) lithography is known as the most promising next-generation lithography technology. Mask defects are one of the main problems hindering the development of extreme ultraviolet lithography. EUV lithography mask defects are mainly divided into two types: amplitude-type defects and phase-type defects. The amplitude-type defects are distributed on the surface of the absorption layer and the multilayer film, and mainly affect the amplitude of the mask diffraction spectrum; the phase-type defects are distributed in the multilayer Inside the film, the deformation of the multilayer film is caused, which mainly affects the phase of the diffraction spectrum of the multilayer film. Compared with amplitude-t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G06F17/50
Inventor 刘晓雷李思坤王向朝步扬管文超
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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