Fast simulation method for extreme ultraviolet photoetching thick mask defects

A technology of extreme ultraviolet lithography and simulation methods, which is applied in the field of extreme ultraviolet lithography masks, and can solve problems such as limiting the scope of application

Active Publication Date: 2013-07-10
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

In this method, the diffraction spectrum is calculated by decomposing the mask structure, the absorption layer adopts a thin mask model and point pulse correction, the multilayer film is approximated by a plane mirror, and the compensation distance of phase propagation is obtained by comparing with strict simulation, which is comparable to the prior art 2 Compared wi

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  • Fast simulation method for extreme ultraviolet photoetching thick mask defects
  • Fast simulation method for extreme ultraviolet photoetching thick mask defects
  • Fast simulation method for extreme ultraviolet photoetching thick mask defects

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Embodiment Construction

[0069] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0070] see first figure 1 , figure 1 It is a schematic diagram of the basic structure of the extreme ultraviolet lithography mask used in the present invention, mainly including the absorption layer 1, the multilayer film 2, the defect 3 in the multilayer film and the substrate 4. The simplified model obtained is as follows figure 2 As shown, the absorbing layer is simplified as an equivalent thin mask 8 located in the middle of the absorbing layer and a certain boundary pulse correction, the multilayer film is simplified as an equivalent plane mirror 9, and its position is determined by the distance 10 from the surface of the multilayer film, and the defect Simplified as the attenuation of the reflectivity of the specific position 11 of the equivalent plane mirror.

[0071] The specifi...

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Abstract

The invention discloses a fast simulation method for extreme ultraviolet photoetching thick mask defects. The method is implemented through that a defect multilayer membrane is equivalent to a defect-free plane mirror and a defect panel mirror; firstly, the diffraction spectrum of a mask absorption layer is obtained through thin-mask approximation, and the mask absorption layer subjected to phase compensation is reflected through the defect multilayer membrane; then, an operation of phase compensation is performed again; and finally, through thin-mask approximation and phase compensation, the mask diffraction spectrum of extreme ultraviolet photoetching defects is obtained. According to the invention, the influence of defects on mask imaging can be effectively simulated, and the simulation speed of extreme ultraviolet photoetching thick mask defects can be improved.

Description

technical field [0001] The invention relates to an extreme ultraviolet lithography mask, in particular to a fast simulation method for defects in an extreme ultraviolet lithography thick mask. Background technique [0002] Mask defects are one of the major hurdles in the development of EUV lithography. Mask defects greatly affect the reflectivity of multilayer films of EUV lithography masks, so certain methods are needed to compensate, and accurate and fast simulation of the influence of mask defects on mask imaging is the main basis for compensation and large Area masking is really required. Therefore, it is of great significance to study fast and accurate mask defect simulation methods. [0003] At present, extreme ultraviolet lithography mask simulation usually adopts a rigorous simulation method to solve the mask diffraction field distribution, such as the FDTD method (see prior art 1, T.Pistor, Y.Deng, and A.Neureuther, "Extreme ultraviolet mask defect simulation: lo...

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Application Information

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IPC IPC(8): G03F1/72G03F1/84G03F7/20
Inventor 刘晓雷李思坤王向朝步扬
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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