Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma etching method and plasma processing device

A plasma and etching treatment technology, which is applied in the fields of plasma, semiconductor/solid-state device manufacturing, discharge tubes, etc., and can solve the problems of inability to deepen the etching depth and improve the etching selectivity ratio.

Active Publication Date: 2018-01-09
TOKYO ELECTRON LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are problems that the selectivity at the time of etching cannot be increased, and the etching depth cannot be deepened.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma etching method and plasma processing device
  • Plasma etching method and plasma processing device
  • Plasma etching method and plasma processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0060] As an example, after performing the first etching treatment and the second etching treatment on the wafer W, SiCl 4 / He mixed gas or SiCl 4 / He / O 2 The mask 5 was coated with a mixed gas, and the third etching process was performed using the coated mask 5 . At that time, a confirmatory test was carried out regarding the influence of the conditions of the coating process and the time of the third etching on the shape of the hole 200 to be formed. At this time, the diameter of the wafer W is 300 mm, the film thickness of the polysilicon used as the mask 5 is 1200 nm, and the film thickness of the silicon nitride layer 4 is 300 nm. Furthermore, the film thickness of the silicon oxide film layer 3 formed on the wafer W is 3500 nm.

[0061] For the conditions of the plasma treatment during the coating treatment, when using SiCl 4 / He mixed gas, SiCl 4 The flow rate of He is 20 sccm, and the flow rate of He is 100 sccm. In addition, in the SiCl 4 / He / O 2 When the mixe...

Embodiment 5

[0069] Example 5 shows the use of SiCl in the coating process 4 / He mixed gas was applied for 5 seconds, and then SiCl was used 4 / He / O 2 The result of the case where the mixed gas was further subjected to a coating process for 20 seconds. In this case as well, it was confirmed that the aspect ratio was greatly improved compared with the comparative example. In addition, in Example 6, the selection ratio was significantly improved as compared with the comparative example. This is because, SiCl 4 / He / O 2 The formed Si coating film containing O (oxygen) and SiCl 4 The Si coating film formed by / He effectively suppresses the etching of the sidewall.

Embodiment 6

[0070] Example 6 shows the results of the case where the temperature of the wafer W was 200° C. compared to the temperature of the wafer W of Example 1, which was 40° C., but was completely the same as that of Example 1. Also in this case, it was confirmed that the aspect ratio was greatly improved compared with the comparative example. This is because the portion where dimension 2 is narrowed is relatively widened at high temperature, thus being able to etch into a deeper portion of hole 200 . The reason why the dimension 2 becomes wider is that the chemical reaction of radicals is promoted when the temperature of the wafer W is high.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

A method for performing plasma etching on a silicon oxide film layer laminated on a wafer, using a silicon mask formed on the silicon oxide film as the mask; wherein the silicon oxide film layer (3) is etched using a plasma of a CF-containing gas, and an Si-containing material is then deposited on the mask using a plasma of an Si-containing gas, after which the silicon oxide film layer is again etched using a plasma of a CF-containing gas in a state in which the Si-containing material is deposited on the silicon mask. A hole having an aspect ratio equal to or greater than 60 is thereby formed.

Description

technical field [0001] The present invention relates to a method of performing plasma etching on an object to be processed and a plasma processing apparatus for performing the plasma etching. [0002] This application claims priority based on Japanese Patent Application No. 2012-136093 filed in Japan on June 15, 2012, and US61 / 663133 filed in the United States on June 22, 2012, and their contents are incorporated herein. Background technique [0003] In the manufacturing process of a semiconductor device, for example, microfabrication such as etching and film formation is performed on an object to be processed under the action of plasma. Examples of microfabrication by plasma etching include trenches and holes for capacitors. [0004] When forming a hole in a silicon layer by etching using plasma, for example, a silicon oxide film is used as a mask, but in this etching process, if the etching rate of the silicon layer is to be increased, the etching rate of the silicon oxid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H05H1/46
CPCH01J37/32091H01J37/32165H01L21/31116H01L21/31144H01L21/3065
Inventor 渡边光
Owner TOKYO ELECTRON LTD