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Substrate support with radio frequency (rf) return path

A substrate support and return path technology, applied in the direction of circuits, sputtering plating, electrical components, etc., can solve problems such as processing non-uniformity

Active Publication Date: 2018-07-20
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inventors believe that conventional electrostatic chucks may be at least in part responsible for these process non-uniformities

Method used

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  • Substrate support with radio frequency (rf) return path
  • Substrate support with radio frequency (rf) return path
  • Substrate support with radio frequency (rf) return path

Examples

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Embodiment Construction

[0018] Embodiments of a substrate support having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support according to the present invention is configured to provide an improved RF return path between the substrate support and an adjacent chamber component to provide a shorter ground path. Chamber components such as process fitting shields that surround the process volume of the process chamber. The RF return path may advantageously provide a low impedance return path for RF current used during processing. For example, in some embodiments, substrate supports according to the present invention may include an RF return path ground plane that provides a more efficient and shorter RF return path electrical length, thereby reducing uncontrolled losses and stray losses, and improve process uniformity.

[0019] In some embodiments, a substrate support configured with RF return path electrodes is provided to provide an RF return path for RF en...

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Abstract

Embodiments of substrate supports with radio frequency (RF) return paths are provided herein. In some embodiments, the substrate support can include a dielectric support body having a support surface and an opposing second surface for supporting thereon, a clamp electrode, and an RF return path electrode a substrate; the clamp electrode is located within the support body and proximate the support surface; the RF return path electrode is located on the second surface of the dielectric support body. In some embodiments, a substrate processing system can include a processing chamber, a shield, and a substrate support, the processing chamber having an inner volume; the shield integrating the content into a processing volume and a non-processing volume, and the shielding The member extends toward the ceiling of the processing chamber; the substrate support is positioned below the shield, wherein the substrate support is as described above.

Description

technical field [0001] Embodiments of the invention generally relate to substrate processing systems. Background technique [0002] For some applications, physical vapor deposition (PVD) processes may use radio frequency (RF) energy to enhance substrate processing. For example, RF energy can be provided to a target in a PVD chamber to facilitate sputtering of the target material and depositing the sputtered material on a substrate in the PVD chamber. The inventors have observed that under certain operating conditions, process non-uniformity issues such as non-uniform film deposition may occur in these PVD chambers. The inventors believe that conventional electrostatic chucks may be at least in part responsible for these process non-uniformities. [0003] Accordingly, the inventors provide embodiments of improved substrate supports for use in substrate processing systems. Contents of the invention [0004] Embodiments of a substrate support having a radio frequency (RF) ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/50
CPCC23C14/35C23C14/50H01J37/34H01J37/32577H01J37/32697H01J37/32724H01J37/32715
Inventor 维贾伊·D·帕克赫瑞安·汉森
Owner APPLIED MATERIALS INC