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Image sensing system and image sensing method of complementary metal oxide semiconductor

An image sensing and semiconductor technology, applied in parts of TV system, image communication, color TV parts, etc., can solve problems such as yield drop, poor quality, and inability to effectively solve CMOS image quality, so as to improve image quality. quality effect

Inactive Publication Date: 2015-02-11
UCHANGE TECH
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Problems solved by technology

However, the above methods cannot be applied to CMOS image sensors with traditional manufacturing processes and packaging, and new manufacturing processes and architectures will also cause problems of yield decline and cost increase
Therefore, the above method still cannot effectively solve the problem of poor CMOS image quality
[0005] To sum up, it can be known that there has been a problem of poor CMOS image quality in the prior art for a long time, so it is necessary to propose improved technical means to solve this problem

Method used

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  • Image sensing system and image sensing method of complementary metal oxide semiconductor
  • Image sensing system and image sensing method of complementary metal oxide semiconductor
  • Image sensing system and image sensing method of complementary metal oxide semiconductor

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Embodiment Construction

[0032] The implementation of the present invention will be described in detail below in conjunction with the drawings and examples, so that the realization process of how to use technical means to solve technical problems and achieve technical effects in the present invention can be fully understood and implemented accordingly.

[0033] Before explaining the CMOS-based image sensing system and method disclosed in the present invention, the structure of the present invention will be described first. The difference between the present invention and the known technology lies in the active pixel sensing unit. At the input end, the DC signal and the AC signal are obtained by repeatedly switching between high and low potentials, and the DC signal is filtered out and only the AC signal is detected for imaging. Compared with the previous method of only obtaining and utilizing DC signals, it is more efficient It can avoid the displacement of the DC signal caused by the difference in ele...

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Abstract

The present invention discloses an image sensing system and method thereof on the basis of a complementary metal oxide semiconductor. By generating a control signal input terminal continued repeatedly switched between the high potential and low potential, the image signal modulated at a particular frequency to avoid DC voltage differences affect image quality, to improve the image quality of technology to achieve efficacy.

Description

technical field [0001] The present invention relates to an image sensing system, in particular to an image sensing system and method based on CMOS which uses CMOS as an active pixel image sensor. Background technique [0002] In recent years, with the popularity and vigorous development of semiconductor technology, Complementary Metal-Oxide-Semiconductor (CMOS) image sensors have gradually been able to compete with Charge Coupled Device (CCD) sensors , especially in the low-end market, since the CMOS image sensor does not require a special manufacturing process, resulting in low cost, the CMOS image sensor has already become the mainstream in the low-end market. [0003] Generally speaking, the image quality produced by CMOS image sensors is not as good as that of CCD image sensors, but due to the lower cost and power saving of CMOS, it is quite attractive for portable devices, so Therefore, how to improve the image quality of CMOS has become one of the problems that variou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/3745H04N5/357
CPCH04N25/60H04N25/76H04N25/75
Inventor 张志聪谢竣杰
Owner UCHANGE TECH
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