A single wafer thickness measuring device

Abstract

The invention relates to a single crystal wafer thickness measuring device. The single crystal wafer thickness measuring device comprises a test board, a test ring, a beam and a micrometer gauge, wherein a screwed hole is upwards formed in one side of the test board; a pin hole is formed in the lower side of a pin hole; a top screw hole is formed in the side wall of the pin hole; a bracket is arranged at the other side of the test board; a cylindrical bump is further arranged in the center position of the upper end surface of the test ring for putting tested single crystal wafer; a threaded column and a pin column are further arranged on the bottom center of the test ring; the test ring is screwed in the screwed hole by virtue of the threaded column, and screwed in the top screw hole by virtue of a screw to resist the pin column for locking; the bracket is movably connected with one end of the beam by virtue of a top screw; and the micrometer gauge is fixed at the other end of the beam. The single crystal wafer thickness measuring device disclosed by the invention has the advantages and the beneficial effects that the structure is simple, the operation is easy, the thickness range of the testable single crystal wafer is 120 mu m-5000 mu m, the diameter range is 2-12 inches, and the single crystal wafer is not damaged.

Description

technical field [0001] The invention relates to a measuring device, in particular to a single wafer thickness measuring device. Background technique [0002] The existing methods for measuring the thickness of a single wafer of semiconductor materials are generally capacitance method or dial gauge (with contact test) measurement. [0003] The capacitance method has been widely used to measure the geometric parameters (thickness and total thickness change) of a single wafer. Compared with the contact test, it has the advantages of high efficiency. At present, there are automatic test and sorting equipment such as ADE6034 and Wafer Check 7000 and 7200. However, when the uniformity of the resistivity of the tested single wafer is poor or the resistivity of the equipment calibration sample differs greatly, the error of the test result is relatively large. [0004] According to the experience summed up by the operators of single wafer thickness testing instruments, the capacitan...

AI Technical Summary

Problems solved by technology

However, when the uniformity of the resistivity of the tested single wafer is poor or the resistivity of the equipment calibration sample differs greatly, the error of the test result is large

[0004] According to the experience summed up by the operators of single wafer thickness testing instruments, the capacitance method has certain limitations in measuring the thickness of a single wafer: ① When the resistivity uniformity is poor, the capacitance method cannot be used for measurement; ② Measurement of single wafers with different thicknesses requires corresponding thickness files 3. When measuring, it will affect the quality of the back surface of the single wafer, especially the single wafer with low hardness or double-sided polished single wafer; 4. When the resistivity r>100W·cm, use a capacitor The error of the measurement result is large

[0005] The existing dial indicator (with contact test) measuring device is not easy to zero and calibrate, and it is easy to cause damage to the surface of the single chip, and the warpage of the single chip itself has a certain influence on the measurement results

Images