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power semiconductor device

A technology of power semiconductors and conductive components, which is applied in the field of power semiconductor devices and can solve problems such as shortened wiring

Active Publication Date: 2017-05-24
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the arrangement of the metal wirings 104, 105, 106, gate electrode terminals 113, and source electrode terminals 114 is designed so that the wiring lines of the lead wires 109, 110, 112 are shortened.

Method used

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Examples

Experimental program
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Effect test

Embodiment approach 1

[0065] figure 1 It is a schematic plan view showing the internal structure of the power semiconductor device according to one embodiment of the present invention.

[0066] figure 1 In the shown power semiconductor device of this embodiment, MOSFET7 (701 to 704) which is a power semiconductor element for switching on the high voltage side and MOSFET8 (801 to 804) which is a power semiconductor element for switching on the low voltage side are respectively divided into 4 A so-called two-in-one power module mounted on the lead frame in parallel.

[0067] figure 1 The portions marked with numerals 1 , 2 , and 3 exposed from the molded resin 15 are external connection terminals of the power circuit. For example, the high voltage side of the external connection terminal 1 is applied with DC power, and the low voltage side of the external connection terminal 3 is applied with DC power to input DC power and output AC power to the external wiring connected to the external connect...

Embodiment approach 2

[0136] Figure 4 , 5 , 6 are schematic plan views showing the internal structure of a power semiconductor device according to another embodiment of the present invention.

[0137] Such as Figure 4 As shown, in this embodiment, the width of the metal wirings 24, 25, 26 does not change with respect to the current direction of the current, and the resistance value of the metal wirings can be adjusted by placing a narrow wire resistance adjustment at an appropriate position of the metal wirings 24, 25, 26. slit pattern (for example, implemented as a hole or a depression in the film thickness direction through the metal wiring) 16, to achieve the same figure 1 The same wiring resistance variation is shown for the case.

[0138] exist Figure 5 In the embodiment described above, in place of the above-mentioned slit pattern 16 for adjusting the wiring resistance, the slit pattern 17 for adjusting the wiring resistance (for example, by denting the end of the metal wiring) 17 is ...

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Abstract

The present invention relates to a power semiconductor device that drives three or more power semiconductor elements in parallel to perform power conversion. reliability. In order to achieve this object, the present invention includes: three or more power semiconductor elements (701 to 704) mounted in parallel on the metal wiring (4); a metal wiring (5) different from the metal wiring (4); One terminal is connected to the wiring (4), and the other terminal is connected to the wiring (5). In this power semiconductor device, the resistance value of the metal wiring (4) in the region where the power semiconductor elements (701-704) are mounted is between The downstream side of the current flow direction is larger than the upstream side.

Description

technical field [0001] The present invention relates to a power semiconductor device that handles a large current, such as a power conversion device. Background technique [0002] Power semiconductor devices are used in various applications including power conversion devices (inverters) used in power conditioners of solar cells, drive control of electric motors, and compressor control of air conditioners. In particular, in recent years, in order to cope with global warming and realize a sustainable society, further energy conservation in home appliances and the spread of natural energy such as solar power have been advancing. Therefore, the demand for power semiconductor devices has also increased, and technical development for high power and high current and high efficiency has been required. [0003] Patent Document 1 relates to a power semiconductor device (inverter module), especially MOSFET (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor F...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L23/48H01L25/18H02M7/48H02M1/00
CPCH01L25/18H02M7/003H01L23/3107H01L23/49541H01L23/49562H01L23/49575H01L24/06H01L24/32H01L24/45H01L24/48H01L24/49H01L24/73H01L25/072H01L2224/04042H01L2224/06181H01L2224/32225H01L2224/32245H01L2224/45014H01L2224/45124H01L2224/45144H01L2224/45147H01L2224/48227H01L2224/48247H01L2224/4903H01L2224/49175H01L2224/73265H01L2924/1203H01L2924/13055H01L2924/13091H01L2924/30101H01L2924/30107H01L2924/1306H01L2924/1305H01L23/48H01L23/49844H01L23/50H01L25/07H02M1/088H01L2224/0603H01L2924/15787H01L2924/181H01L2224/49111H01L2924/00014H01L2924/00012H01L2924/00H01L2924/206H02M7/537
Inventor 冈山芳央
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD