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Power semiconductor device

A technology of power semiconductors and conductive components, applied in the field of power semiconductor devices, can solve problems such as shortening of traces

Active Publication Date: 2015-02-25
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the arrangement of the metal wirings 104, 105, 106, gate electrode terminals 113, and source electrode terminals 114 is designed so that the wiring lines of the lead wires 109, 110, 112 are shortened.

Method used

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Experimental program
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Embodiment approach 1

[0065] figure 1 It is a schematic plan view showing the internal structure of the power semiconductor device according to one embodiment of the present invention.

[0066] figure 1 In the shown power semiconductor device of this embodiment, MOSFET7 (701 to 704) which is a power semiconductor element for switching on the high voltage side and MOSFET8 (801 to 804) which is a power semiconductor element for switching on the low voltage side are respectively divided into 4 A so-called two-in-one power module mounted on the lead frame in parallel.

[0067] figure 1 The portions marked with numerals 1 , 2 , and 3 exposed from the molded resin 15 are external connection terminals of the power circuit. For example, the high voltage side of the external connection terminal 1 is applied with DC power, and the low voltage side of the external connection terminal 3 is applied with DC power to input DC power and output AC power to the external wiring connected to the external connect...

Embodiment approach 2

[0137] Figure 4 , 5 , 6 are schematic plan views showing the internal structure of a power semiconductor device according to another embodiment of the present invention.

[0138] like Figure 4 As shown, in this embodiment, the width of the metal wirings 24, 25, 26 does not change with respect to the current direction of the current, and the resistance value of the metal wirings can be adjusted by placing a narrow wire resistance adjustment at an appropriate position of the metal wirings 24, 25, 26. slit pattern (for example, implemented as a hole or a depression in the film thickness direction through the metal wiring) 16, to achieve the same figure 1 The same wiring resistance variation is shown for the case.

[0139] exist Figure 5 In the embodiment described above, in place of the above-mentioned slit pattern 16 for adjusting the wiring resistance, the slit pattern 17 for adjusting the wiring resistance (for example, by denting the end of the metal wiring) 17 is pro...

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Abstract

The present invention relates to a power semiconductor device, which performs power conversion by driving in parallel three or more power semiconductor elements, and the purpose of the present invention is to reduce variance of a voltage to be applied to between the terminals of each of the power semiconductor elements, and to improve service-life of the power semiconductor elements and reliability of the power semiconductor device. In order to achieve the purpose, in this power semiconductor device, which is provided with three or more power semiconductor elements (701-704) that are aligned and mounted on metal wiring (4), and metal wiring (5) different from the metal wiring (4), and which has one terminal of each of the power semiconductor elements connected to the wiring (4), and another one terminal thereof connected to the wiring (5), the resistance value of the metal wiring (4) in a region where the power semiconductor elements (701-704) are mounted is higher in the downstream than that in the upper stream in the current flowing direction.

Description

technical field [0001] The present invention relates to a power semiconductor device that handles a large current, such as a power conversion device. Background technique [0002] Power semiconductor devices are used in various applications including power conversion devices (inverters) used in power conditioners of solar cells, drive control of electric motors, and compressor control of air conditioners. In particular, in recent years, in order to cope with global warming and realize a sustainable society, further energy conservation in home appliances and the spread of natural energy such as solar power have been advancing. Therefore, the demand for power semiconductor devices has also increased, and technical development for high power and high current and high efficiency has been required. [0003] Patent Document 1 relates to a power semiconductor device (inverter module), especially MOSFET (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor F...

Claims

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Application Information

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IPC IPC(8): H01L25/07H01L23/48H01L25/18H02M7/48H02M1/00
CPCH01L24/06H01L2224/45124H02M7/003H01L2224/32245H01L2924/13091H01L23/49562H01L25/18H01L2224/45014H01L2924/30107H01L24/49H01L2224/45147H01L2224/32225H01L23/49575H01L2924/30101H01L2924/1305H01L24/45H01L23/3107H01L24/48H01L24/32H01L2924/1203H01L2224/48247H01L2224/48227H01L23/49541H01L2224/04042H01L2224/4903H01L25/072H01L2224/06181H01L2224/45144H01L2224/73265H01L2224/49175H01L2924/1306H01L24/73H01L2924/13055H01L23/48H01L23/49844H01L23/50H01L25/07H02M1/088H01L2224/0603H01L2924/15787H01L2924/181H01L2224/49111H01L2924/00014H01L2924/00012H01L2924/00H01L2924/206H02M7/537
Inventor 冈山芳央
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD