Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and circuit for driving storage array

A technology for storage arrays and driving methods, applied in the field of storage array driving methods and driving circuits, capable of solving problems such as unfavorable memory storage array efficiency and high storage array overhead, and achieving the effects of improving array efficiency and reducing overhead

Inactive Publication Date: 2015-03-25
GIGADEVICE SEMICON (BEIJING) INC
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] After determining a memory and a driver that matches the memory, although the above-mentioned driving circuit and driving method in the prior art realize the driving of the memory array memory cells in the process of programming, erasing or reading to a certain extent, However, this storage array driving circuit and driving method cause a large overhead of the storage array and are not conducive to improving the efficiency of the memory storage array, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and circuit for driving storage array
  • Method and circuit for driving storage array
  • Method and circuit for driving storage array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] The present invention will be described in more detail and complete below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0036] During the programming, erasing or reading process of the storage unit in the memory, the memory storage array must be equipped with a driver, and the driver realizes the programming, erasing or reading of the storage unit in the memory storage array according to the encoding information sent by the encoder. Pick. For example, to program the storage unit in the memory storage array, PC and other related equipment send relevant programming information to the memory, the encoder configured in the storag...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of storage drive, and particularly relates to a method and a circuit for driving a storage array. The method comprises the following steps: dividing a storage array of a storage device according to a driver matched with the storage device to form at least one storage array block, wherein each storage array block has a first end part and a second end part; applying first drive on the first end part of the storage array block; and applying second drive on the second end part of the storage array block. According to the method, the double-end drive is adopted for the drive of the storage array block. The method disclosed by the invention can be used for reducing the storage array spending and improving the array efficiency of the storage display.

Description

technical field [0001] The invention relates to the technical field of memory drive, in particular to a memory array drive method and a drive circuit. Background technique [0002] In order to implement programming, erasing or reading of storage cells in the memory storage array, the storage array needs to be driven during the programming, erasing or reading process of the memory storage array. The programming, erasing or reading of the storage cells in the memory storage array means that the driver configured by the storage array generates high-level and low-level timing signals under the action of the encoder, and the memory is stored through the high and low levels of this timing signal. The memory cells of the array are programmed, erased or read. [0003] In the prior art, after a memory and a driver matching the memory are determined, the drive of the storage array is implemented in the following way: the storage array is divided according to the configured driver to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06G11C11/4063G11C11/413
Inventor 胡洪张建军张赛
Owner GIGADEVICE SEMICON (BEIJING) INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com