Semiconductor structure

Abstract

A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.

Description

technical field [0001] The present invention relates to a semiconductor structure, in particular to a semiconductor structure with an anti-stress region. Background technique [0002] see Image 6 , an existing known semiconductor structure 200, which has a carrier 210, a first protection layer 220, a second protection layer 230 and a third protection layer 240, because the first protection layer 220, the second protection layer 230 and The third protection layer 240 is quadrilateral and the first protection layer 220, the second protection layer 230 and the third protection layer 240 are stacked on the carrier 210, so the stress of the semiconductor structure 200 is easy to concentrate on the The overlapping corners of the first passivation layer 220 and the second passivation layer 230 are broken or disconnected at the overlapping corners of the first passivation layer 220 and the second passivation layer 230 , thereby reducing the yield of the semiconductor structure 200 ...

AI Technical Summary

Problems solved by technology

[0002] see Image 6 , an existing known semiconductor structure 200, which has a carrier 210, a first protection layer 220, a second protection layer 230 and a third protection layer 240, because the first protection layer 220, the second protection layer 230 and The third protection layer 240 is quadrilateral and the first protection layer 220, the second protection layer 230 and the third protection layer 240 are stacked on the carrier 210, so the stress of the semiconductor structure 200 is easy to concentrate on the The overlapping corners of the first passivation layer 220 and the second passivation layer 230 , so that the overlapping corners of the first passivation layer 220 and the second passivation layer 230 are broken or disconnected, thereby reducing the yield of the semiconductor structure 200

[0003] It can be seen that the above-mentioned existing semiconductor structure obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general product has no suitable structure to solve the above-mentioned problems. This is obviously the relevant industry. Urgent problem

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