Solid-state imaging device

Abstract

A pixel (10) is provided with: a photoelectric conversion unit (21); a charge storage unit (115); an amplifying transistor (116) connected from the gate thereof to the charge storage unit (115); a selection transistor (202) connected from the source thereof to the source of the amplifying transistor (116) and connected from the drain thereof to a column signal line (23); and a reset transistor (117) connected from the source thereof to the charge storage unit (115) and from the drain thereof to the column signal line (23). During the pixel signal reading period, a first voltage for setting the selection transistor (202) to a conductive state is applied to the gate of the selection transistor (202), and a second voltage for setting the reset transistor (117) to a non-conductive state is applied to the gate of the reset transistor (117); during the reset period of the charge storage unit (115), an intermediate voltage between the first voltage and the second voltage is applied to the gate of the selection transistor (202).

Description

technical field [0001] The present invention relates to a solid-state imaging device, and more particularly to a stacked solid-state imaging device. Background technique [0002] Patent Document 1 discloses a stacked solid-state imaging device. In the multilayer solid-state imaging device disclosed in Patent Document 1, noise occurs when signal charges are reset. Specifically, when the pulse shape of the reset pulse is steep when it is turned off, kTC noise occurs because the charge on the channel moves to either the source or the drain of the reset transistor is random. In addition, kTC noise is also generated due to capacitive coupling between the reset signal line and the pixel electrode or the like. [0003] Furthermore, even if correlated double sampling is used in a stacked solid-state imaging device, kTC noise cannot be completely eliminated. This is because, in a stacked solid-state imaging device, the photoelectric conversion unit provided above the semiconductor...

AI Technical Summary

Problems solved by technology

[0010] The technology disclosed in Patent Document 2 such as Figure 14 As shown, the unit pixel 510 can only be adapted to the case of having four transistors of the amplification transistor 514, the reset transistor 516, the row selection transistor 518, and the transistor 520.

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