Solid-state image pickup device

A solid-state imaging device and pixel technology, which is applied in the direction of electric solid-state devices, radiation control devices, image communication, etc., can solve the problem of increasing kTC noise and achieve the effect of reducing kTC noise

Inactive Publication Date: 2015-05-27
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the solid-state imaging device disclosed in Patent Document 1 has a problem of increased kTC noise

Method used

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Experimental program
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Embodiment Construction

[0023] Hereinafter, the solid-state imaging device according to the embodiment will be described with reference to the drawings. In addition, although the solid-state imaging device according to the present invention will be described using the embodiments and drawings, these are only examples, and the solid-state imaging device according to the present invention is not limited to these examples.

[0024] (first embodiment)

[0025] The overall configuration of the solid-state imaging device according to the first embodiment of the present invention will be described.

[0026] figure 1 It is a block diagram showing the overall configuration of the solid-state imaging device according to the embodiment. The solid-state imaging device 1 shown in this figure includes: a pixel unit 12 in which a plurality of pixels 10 are arranged in a matrix; row signal drive circuits 13a and 13b; A noise canceling circuit 15 , a horizontal driving circuit 16 , and an output stage amplifier 1...

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Abstract

This solid-state image pickup device (1) is equipped with a pixel section (12) where multiple pixels (10) are arranged in a matrix form. The pixels (10) are each equipped with a photoelectric conversion part (21), an FD part (115), an amplification transistor (116), a reset transistor (117), and a selection transistor (202). For each column, the pixel section (12) has a power supply line (25) that is connected to the drains of the amplification transistors (116), a column signal line (23) that is connected to the sources of the selection transistors (202), a first feedback line (24) that is connected to the drains of the reset transistors (117), a negative feedback circuit (405), and a positive feedback circuit (406). The negative feedback circuit (405) negatively feeds back a signal that was output to the column signal line (23) to the first feedback line (24), and the positive feedback circuit (406) positively feeds back the signal that was output to the column signal line (23) to the power supply line (25).

Description

technical field [0001] The present invention relates to a solid-state imaging device, and more particularly to a stacked solid-state imaging device. Background technique [0002] Patent Document 1 shows a stacked solid-state imaging device. In the multilayer solid-state imaging device disclosed in Patent Document 1, noise occurs when signal charges are reset. Specifically, when the pulse shape of the reset pulse is steep when it is turned off, kTC noise occurs because the charge on the channel moves to either the source or the drain of the reset transistor is random. In addition, kTC noise is also generated due to capacitive coupling between the reset signal line and the pixel electrode or the like. [0003] Furthermore, even if correlated double sampling is used in a stacked solid-state imaging device, kTC noise cannot be completely eliminated. This is because, in a stacked solid-state imaging device, the photoelectric conversion unit provided above the semiconductor sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/363H01L27/146H04N5/374
CPCH01L27/14621H01L27/14627H01L27/14667H04N25/65H04N25/766H04N25/75
Inventor 石井基范
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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