Unlock instant, AI-driven research and patent intelligence for your innovation.

RC-IGBT with freewheeling Sic diode

A technology of freewheeling diodes and diodes, applied in the direction of diodes, transistors, pulse generation, etc., can solve the problem of difficult cost of SiC devices and achieve the effect of high conduction loss

Active Publication Date: 2015-04-29
HITACHI ENERGY SWITZERLAND AG
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] On the other hand, SiC unipolar diodes can be used as freewheeling diodes, but usually suffer from oscillatory behavior and high switching losses at higher temperatures
Additionally, the cost of SiC devices makes it difficult to compensate for this behavior with larger area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • RC-IGBT with freewheeling Sic diode
  • RC-IGBT with freewheeling Sic diode
  • RC-IGBT with freewheeling Sic diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] figure 1 The circuit layout of the high-power semiconductors of the semiconductor module 10 is shown. It must be understood that high power semiconductors may be semiconductors designed to handle currents in excess of 1OA and / or voltages in excess of 1000V. The module 10 comprises two BIGTs 12a, 12b connected in series and forming a half bridge. The first transistor 12 provides a DC+ input 14 at its collector 16a and has its emitter 18a connected to the collector 16b of a second transistor 12b which provides a DC- input 20 at its emitter 18b . A load output 22 is provided between the two transistors 12a, 12b (ie by the emitter 18a and collector 16b).

[0039] Each of the transistors 12a, 12b comprises an internal reverse conducting diode 24a, 24b indicated in the circuit symbol for both transistors and a gate 26a, 26b adapted to switch the respective transistor 12a, 12b on and off.

[0040] RC-IGBTs consist of freewheeling diodes and insulated gate bipolar transisto...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor module as disclosed can include a reverse conducting transistor, with a gate, a collector and an emitter providing a reverse conducting diode between collector and emitter; at least one freewheeling diode connected antiparallel to the transistor having a forward voltage drop higher than the reverse conducting diode during a static state; and a controller to turn the transistor on and off. The controller can apply a pulse to the transistor gate before the reverse conducting diode enters a blocking state, such that when the reverse conducting diode enters the blocking state, a forward voltage drop of the reverse conducting diode is higher than of the at least one freewheeling diode.

Description

technical field [0001] The invention relates to the field of power semiconductors. In particular, the invention relates to semiconductor modules and methods for switching reverse conducting transistors on such modules. Background technique [0002] For example, high power inverters, rectifiers and other electrical high power devices include half bridge modules, which typically include two semiconductor switches connected in series to connect the DC side to the AC side of the device. In this case, the semiconductor switch is blocked in its reverse direction (i.e. the direction opposite to the direction suitable for conducting current), when the semiconductor switch is turned on, it is possible to have a freewheeling diode connected in anti-parallel to the semiconductor switch of. [0003] Some semiconductor switches already provide such a reverse conduction current path independently, usually by means of a reverse conduction diode integral to the semiconductor switch. An e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L21/331
CPCH03K17/08142H03K17/08148H03K17/12H03K17/66H03K17/74H03K2217/0036H03K17/10H01L29/7393H03K17/567H03K3/012
Inventor M.拉希莫
Owner HITACHI ENERGY SWITZERLAND AG