A method for improving indium thermally conductive interface material
An interface material and material strip technology, which is applied in the field of improving the thermal conductivity of indium interface materials, can solve the problems of easy residual thermal stress and low thermal conductivity.
Active Publication Date: 2017-02-22
SOLDERWELL MICROELECTRONIC PACKAGING MATERIALS CO LTD
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Problems solved by technology
Traditional phase-change thermal interface materials mainly refer to thermoplastic resins whose melting temperature is generally 50-80°C, but these thermoplastic resins themselves have very low thermal conductivity.
Another type of phase change thermal interface material - low melting point metals, but it is easy to retain thermal stress when it changes from liquid to solid
Method used
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Embodiment Construction
[0031] The following examples are a further detailed description of the present invention.
[0032] The method for improving the indium thermal interface material provided by the present invention is mainly embodied in adding 50-3000 ppm of gallium to pure indium during the smelting process.
[0033] The process flow of this specific embodiment is:
[0034] 1. Special smelting process, put the pre-prepared pure indium in a vacuum induction melting furnace, first melt it at 280~320℃ under non-vacuum conditions, and add 50~3000ppm gallium to the melted pure indium, stir 2 to 3 minutes and thoroughly slag off, then close the furnace cover, wait until the vacuum is below 10Pa and keep it for half an hour, then cast into ingots under vacuum conditions, and remove the rougher skin;
[0035] 2. Extrusion process, extruding the ingots with the outer skin of the car into strips on the extruder;
[0036] 3. The rolling process, the strip is rolled on a rolling mill into a strip of required thick...
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Abstract
The invention discloses a method for improving an indium thermal conductive interface material and belongs to the technical field of thermal conductive interface materials. The method aims at solving the problems of high density and heat dissipation of ultra-large scale integrated circuits. The method for improving the indium thermal conductive interface material is mainly characterized in that 50-3000ppm gallium is added in pure indium during the smelting process. The thermal conductive interface material obtained by the method has the advantages of no toxicity, no harm, high thermal conductivity, high flexibility, easiness in installation and dismountability and the surface cleanliness of obtained thermal conductive interface material reaches above 90% and the oxygen content is below 25ppm.
Description
Technical field [0001] The present invention relates to the technical field of thermally conductive interface materials, in particular to a method for improving indium thermally conductive interface materials. Background technique [0002] With the increasing miniaturization and miniaturization of electronic components, ultra-high-density, ultra-large-scale integrated circuits (chips) will be the general trend of integrated circuits in the future. The increase in integration and power density will inevitably lead to an increase in the heating density of integrated circuits and electronic devices during operation, thereby increasing the temperature during operation. Therefore, the heat dissipation of electronic packaging is becoming more and more important for the efficiency and reliability of electronic devices. Especially those high-power devices, such as high-power diode lasers, high-brightness light-emitting diodes and high-power sensors, etc., these devices generate a lot of ...
Claims
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IPC IPC(8): C22C28/00C22C1/02
Inventor 蔡航伟胡鸿杜昆蔡烈松陈明汉
Owner SOLDERWELL MICROELECTRONIC PACKAGING MATERIALS CO LTD