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Test Structure of Poisson's Ratio of Thick Film Silicon Material on Insulating Substrate

A technology for testing structures on an insulating substrate, applied in the direction of testing the strength of materials by applying a stable torsion force, can solve the problems of unstable measurement data accuracy, etc., and achieve low requirements for testing equipment, simple testing methods, and simple calculation methods Effect

Inactive Publication Date: 2017-02-01
SOUTHEAST UNIV
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Problems solved by technology

An important problem in the electrostatic drive method is the pull-in phenomenon. Since the pull-in phenomenon is an unsteady state, the accuracy of the measurement data is also unstable. angle twist

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  • Test Structure of Poisson's Ratio of Thick Film Silicon Material on Insulating Substrate

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Embodiment Construction

[0019] Attached below figure 1 The present invention will be further described.

[0020] The test structure consists of two parts: a polysilicon-fixed beam 102 for suspending the torsion structure and a torsion structure 101 .

[0021] The polysilicon fixed support beam 102 used for suspending the torsion structure belongs to a wide and short double-end fixed support structure. The polysilicon-supported beam is formed by connecting two anchor areas, ie, the first anchor area 102-2, the second anchor area 102-4, and a wide short beam 102-3. Two of the anchor regions are respectively located on two support islands made of thick-film silicon, that is, the first support island 102-1 and the second support island 102-5, and these two thick-film silicon islands are insulated by silicon dioxide of the SOI material. Layer 100-2 is fixed on a large substrate 100-1.

[0022] The torsion structure 101 is composed of an electrostatically driven torsion bar and two left and right limit ...

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Abstract

The invention provides a thick-film silicon material poisson ratio test structure on an insulation substrate, which is used for measuring a poisson ratio of a thick-film silicon material on an insulation substrate. The test structure consists of two parts, i.e. a polycrystalline silicon clamped beam for suspending a torsion structure and the torsion structure. The torsion structure consists of an electrostatic-driven torsion rod, a left limiting structure and a right limiting structure. The center of the torsion rod is a torsion beam, and the upper end surface of the torsion beam is connected to the center position of the polycrystalline silicon clamped beam to form a suspension-torsion structure. The torsion rod is driven by an electrostatic force to make torsion motion by adopting the torsion beam as an axis. The torsion angle is controlled by utilizing a stop structure to form a specific test angle. The poisson ratio of the thick-film silicon material can be calculated by virtue of the length, the width and the thickness of the torsion beam, the Young modulus of the thick-film silicon material and the applied electrostatic force. The test structure, a measuring method and a parameter extraction method are very simple.

Description

technical field [0001] The invention provides a testing structure for Poisson's ratio of thick film silicon material on an insulating substrate. The invention belongs to the technical field of microelectromechanical system (MEMS) material parameter testing. Background technique [0002] The performance of microelectromechanical devices is closely related to material parameters. Due to the influence of processing, some material parameters will change. These uncertain factors caused by processing technology will make device design and performance prediction uncertain and unstable. Case. The purpose of material parameter testing is to be able to measure the material parameters of MEMS devices manufactured by a specific process in real time, monitor the stability of the process, and feed back the parameters to the designer so that the design can be corrected. Therefore, testing without leaving the processing environment and using general-purpose equipment has become a necessar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/22
Inventor 李伟华王雷张璐周再发
Owner SOUTHEAST UNIV
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