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Semiconductor device and method for forming semiconductor device

A technology of semiconductors and devices, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc.

Active Publication Date: 2017-10-13
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, switching losses contribute significantly to the overall losses of fast switching devices

Method used

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  • Semiconductor device and method for forming semiconductor device
  • Semiconductor device and method for forming semiconductor device
  • Semiconductor device and method for forming semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0015] Various example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are shown. In the drawings, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0016] Therefore, while the example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will be described herein in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the disclosure. Throughout the description of the figures, like numbers refer to like or similar elements.

[0017] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to...

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PUM

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Abstract

A semiconductor device includes at least one ohmic contact region between a semiconductor substrate of the semiconductor device and a conductive structure disposed adjacent the semiconductor substrate. Furthermore, the semiconductor device includes at least one Schottky contact region between the conductive structure and the semiconductor substrate of the semiconductor device. At least one ohmic contact area is arranged adjacent to at least one Schottky contact area. The semiconductor substrate includes a first doped layer disposed adjacent the conductive structure. The average doping concentration of the surface region of the first doped layer in a region of the at least one ohmic contact region differs from the average doping concentration of the surface region of the first doped layer in a region of the at least one Schottky contact region. Impurity concentration, the difference is less than 10%.

Description

technical field [0001] Embodiments relate to measures for reducing switching losses of semiconductor devices, and in particular, to semiconductor devices and methods for forming semiconductor devices. Background technique [0002] There is general interest in reducing losses in semiconductor devices during operation. For example, switching losses contribute significantly to the overall losses of fast switching devices. In addition, the improvement of the robustness of semiconductor devices is also of general interest. Therefore, there is an urgent need to reduce switching losses of semiconductor devices while providing devices with high robustness or high durability. Contents of the invention [0003] Some embodiments relate to a semiconductor device comprising at least one ohmic contact region between a semiconductor substrate of the semiconductor device and a conductive structure arranged adjacent to the semiconductor substrate. Furthermore, the semiconductor device c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L21/77
CPCH01L29/32H01L29/36H01L29/417H01L29/45H01L29/66136H01L29/868H01L29/1608H01L29/2003H01L29/872H01L29/66143H01L29/47
Inventor H·许斯肯A·毛德H-J·舒尔策W·勒斯纳H·舒尔策
Owner INFINEON TECH AG