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Method of manufacturing a semiconductor structure and semiconductor structure

A semiconductor and liquid technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of effective gate oxides increasing on-resistance, production tolerances, etc.

Inactive Publication Date: 2015-06-10
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lower edge of the body should not lie so low to reach the field oxide region, since the increased effective gate oxide thickness will increase the on-resistance
This means that production tolerances are often introduced

Method used

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  • Method of manufacturing a semiconductor structure and semiconductor structure
  • Method of manufacturing a semiconductor structure and semiconductor structure
  • Method of manufacturing a semiconductor structure and semiconductor structure

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Embodiment Construction

[0024] The following detailed description refers to the accompanying drawings, which show, by way of illustration, specific details and embodiments in which the invention can be practiced.

[0025] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment or design described herein as "exemplary" is not necessarily to be construed as preferred or preferred over other embodiments or designs.

[0026] The word "over" used with respect to deposited material formed "over" a side or surface, may be used herein to mean that the deposited material may be formed "directly on", such as with The indicated sides or surfaces are in direct contact. The word "over" used with respect to deposited material formed "over" a side or surface, may be used herein to mean that the deposited material may be formed "indirectly on" at One or more further layers may be arranged between the indicated sides or surfaces and the deposition material.

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PUM

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Abstract

A method for manufacturing a semiconductor structure is provided, which may include: forming a p-doped region adjacent to an n-doped region in a substrate; carrying out an anodic oxidation to form an oxide layer on a surface of the substrate, wherein the oxide layer in a first portion of the surface extending along the n-doped region has a greater thickness than the oxide layer in a second portion of the surface extending along the p-doped region.

Description

technical field [0001] Various embodiments relate generally to methods of fabricating semiconductor structures, and to semiconductor structures. Background technique [0002] Modern power component cells are usually designed according to the trench concept, where the trenches are arranged perpendicular to the chip surface. Therefore, the packing density as well as the added value per unit silicon area are increased. [0003] A field plate component represents a specific type of trench cell. A feature of this field plate component is usually a relatively thick oxide structure (field oxide) in the lower portion of the sidewall of the trench and laterally adjacent to the poly-layer, which Acts as a so-called field plate (field plate concept). A significant portion of the equipotential lines usually pass through the oxide structure, which means it contributes significantly to reducing the voltage between the source on the front side of the chip and the drain on the back side ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/316H01L29/40H01L29/78
CPCH01L29/407H01L21/0223H01L21/02238H01L21/02255H01L21/02258H01L21/225H01L21/265H01L21/26513H01L21/3081H01L21/76802H01L21/76877H01L29/0623H01L29/0634H01L29/086H01L29/0878H01L29/42368H01L29/456H01L29/66477H01L29/66696H01L29/66734H01L29/78H01L29/7811H01L29/7813
Inventor H-J·舒尔策M·聪德尔A·毛德A·梅瑟F·希尔勒H·韦伯
Owner INFINEON TECH AG