Phase-change memory write/erase circuit with initializing function and rapid write/erase method thereof
A technology of phase change memory and initialization method, which is applied in the field of write and erase circuits of phase change memory, can solve problems such as the limit of write and erase speed, achieve the effects of improving bit pass rate, realizing high-speed write and erase operations, and uniform resistance distribution
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Embodiment 1
[0037] see Figure 1 to Figure 4, the present invention provides a phase change memory write and erase circuit with initialization function, the phase change memory write and erase circuit at least includes:
[0038] The initialization control circuit is connected to the power supply, and is used to access the power-on reset signal of the internal circuit and the external signal and send out the initialization reset signal;
[0039] The initialization circuit includes an original current source; the initialization circuit is connected to the power supply and the initialization control circuit, and sends a reset current pulse under the control of the initialization reset signal to initialize the phase change memory unit;
[0040] The write-erase control circuit includes a write-erase control signal generation circuit and a write-erase operation circuit connected to the write-erase control signal generation circuit; the write-erase operation circuit is connected between the powe...
Embodiment 2
[0056] The present invention also provides an initialization method of a phase change memory write-erase circuit with an initialization function: when the initialization control circuit receives an internal circuit power-on reset signal and the external signal is in a specified state, the initialization control circuit outputs High level and acts on the initialization circuit; the initialization circuit shields the original current source, so that the power supply directly acts on the phase-change memory unit, so that the phase-change memory unit is reset and initialized; the specified state is low.
[0057] Specifically, when the silicon wafer (Wafer) is manufactured and stored, and the silicon wafer is tested, the working point of the internal circuit of the chip is established, and a POR signal is sent to allow the initialization of the phase change memory. Such as figure 1 As shown, the external initialization signal is applied to the first input terminal of the XOR gate ...
Embodiment 3
[0064] The present invention also provides a fast writing and erasing method of a phase change memory write and erase circuit with an initialization function: when the phase change memory is working in a normal state after initialization, the write operation adopts a right-angled trapezoidal pulse current that rises rapidly and falls slowly , the pulse height is 0.5-3 mA, the high-level pulse width is 200-400 nanoseconds; the wiping operation uses a rectangular pulse current that rises and falls rapidly, the pulse height is 0.5-3 mA, and the pulse width is 200-400 nanoseconds.
[0065] see Figure 5 and Figure 6 ,in, Figure 5 It shows the current pulse waveform when the phase change memory write-erase circuit with initialization function of the present invention performs an erase operation (Reset); Figure 6 Shown is the current pulse waveform when the phase-change memory write-erase circuit with initialization function of the present invention performs a write operation (...
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