Step pulse confirmation method and device, electronic equipment and storage medium

Abstract

The invention relates to a step pulse confirmation method. The method comprises the following steps: determining a current equation containing a first unknown parameter and a second unknown parameterbased on a determined resistance equation and a temperature equation; determining a first step pulse corresponding to the first resistance value according to the plurality of resistance values corresponding to the plurality of first step pulses; wherein the pulse width and the amplitude of the first pulse of the first step pulse corresponding to the resistance value of the first resistor are the first pulse width and the first amplitude; determining a second step pulse corresponding to the second resistance value according to the plurality of resistance values corresponding to the plurality ofsecond step pulses, wherein the pulse width of the non-first pulse of the second step pulse corresponding to the resistance value of the second resistor is the second pulse width; determining a current equation based on the second pulse width and the first amplitude; and adjusting the amplitude of the non-first pulse of the second step pulse corresponding to the second resistance value based on the current equation to obtain a target step pulse matched with the current equation. The target step pulse obtained by the design can improve the success rate of the erasing operation and increase thespeed.

Description

technical field [0001] The invention relates to the field of electronic circuits, in particular to a step pulse confirmation method, device, electronic equipment and storage medium. Background technique [0002] Phase Change Memory (PCM for short) technology is based on the concept that Ovshinsky proposed in the late 1960s and early 1970s that phase change films can be applied to phase change storage media. It is a cheap, Stable memory device. Phase-change memory can be made on a silicon wafer substrate, and its core function comes from a fast and repeatable phase-change material. Due to the advantages of high-speed reading, high rewritable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance, phase change memory is considered by the International Semiconductor Industry Association to be the most likely to replace the current flash memory Memory becomes the mainstream product of future memory and the first...

AI Technical Summary

Problems solved by technology

[0005] What the present invention aims to solve is that the Joule heat change provided by the step pulse during the erasing operation cannot correspond to the crystallization process of the phase change material, resulting in incomplete crystallization of the phase change memory, which in turn makes the unit resistance distribution of the entire phase change memory uneven, making Technical issue with low success rate and slow speed of wiping operation

Images