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Silicon Production with Fluidized Bed Reactor Utilizing Tetrachlorosilane to Reduce Wall Deposition

A fluidized bed reactor and reactor technology, applied in the direction of fluidized bed combustion equipment, silicon compounds, chemical instruments and methods, etc., can solve the problem that the product quality is not enough to be manufactured by integrated circuits

Inactive Publication Date: 2015-08-12
赫姆洛克半导体有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another problem with using the FBR process is that the product quality is usually not sufficient for the manufacture of integrated circuits; however, the products of the FBR process can be used for solar-grade applications

Method used

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  • Silicon Production with Fluidized Bed Reactor Utilizing Tetrachlorosilane to Reduce Wall Deposition
  • Silicon Production with Fluidized Bed Reactor Utilizing Tetrachlorosilane to Reduce Wall Deposition
  • Silicon Production with Fluidized Bed Reactor Utilizing Tetrachlorosilane to Reduce Wall Deposition

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Embodiment Construction

[0034] A method of producing silicon comprising:

[0035] 1) supplying a deposition gas including hydrogen and silicon monomer to an inner region of a fluidized bed reactor (FBR), while

[0036] 2) supplying etching gas to the peripheral area of ​​the FBR,

[0037] Wherein the peripheral area is located between the inner area and the FBR wall. In step 1), silicon monomers can be selected from silanes (SiH 4 ) and trichlorosilane (HSiCl 3 ). Deposition and etch gases are introduced into the heated zone of the FBR. The amount of silicon monomer in step 1) is sufficient to deposit silicon on the fluidized silicon particles in the reaction zone located above the heating zone of the FBR. The amount of etching gas in step 2) is sufficient to etch silicon on the walls of the FBR. The etching gas is basically composed of SiCl 4 composition.

[0038] In step 2) of the method, substantially SiCl 4 The composition etching gas is fed into the FBR and close to the FBR wall. Silic...

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Abstract

Silicon deposits are suppressed at the wall of a fluidized bed reactor by a process in which an etching gas is fed near the wall of the reactor. The etching gas includes tetrachlorosilane. A Siemens reactor may be integrated into the process such that the vent gas from the Siemens reactor is used to form a feed gas and / or etching gas fed to the fluidized bed reactor.

Description

[0001] This application is a divisional application, the application number of the original application is 200980144312.7 (international application number PCT / US2009 / 060310), the application date is October 12, 2009, and the title of the invention is "Reducing the deposition on the wall by using tetrachlorosilane Fluidized bed reactor for the production of silicon". [0002] Cross References to Related Applications [0003] This application claims the benefit of US Patent Application No. 12 / 265,038, filed November 5, 2008, under 35 U.S.C. 120. US Patent Application No. 12 / 265,038 is incorporated herein by reference. [0004] Statement Regarding Federally Funded Research [0005] none Background technique [0006] It is well known that rod-shaped silicon can be produced by a method called the Siemens process. will include hydrogen and silane (SiH 4 ) or mixtures including hydrogen and trichlorosilane (HSiCl 3 ) is fed into a decomposition reactor containing a seed rod ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
CPCB01J2219/00252B01J8/1827C01B33/029F23C10/20B01J8/1818B01J8/18C01B33/03Y02P20/129C01B33/035
Inventor 迈克尔·莫尔纳
Owner 赫姆洛克半导体有限责任公司