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Anti-reflection anti-reflection transparent conductive film

A technology of transparent conductive film and anti-reflection and anti-reflection technology, which is applied in the direction of electrical digital data processing, instrument, input/output process of data processing, etc. Control process requirements are very harsh and other issues, to achieve the effect of reducing production costs and easy control of the disappearing effect

Active Publication Date: 2017-08-18
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to obtain an erasing film with an erasing effect that meets the requirements, the coating control process requirements for high-refractive index materials are very strict (for Nb 2 o 5 or TiO 2 The film thickness change is less than ±0.5nm), and the process is difficult; in addition, the metal and ceramic targets of Nb and Ti materials are relatively expensive, which also increases the manufacturing cost of the disappearing anti-reflection transparent conductive film

Method used

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  • Anti-reflection anti-reflection transparent conductive film
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  • Anti-reflection anti-reflection transparent conductive film

Examples

Experimental program
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Embodiment 1

[0019] Such as figure 1 As shown, the present invention provides a kind of disappearing anti-reflection transparent conductive film, comprising substrate 1, the top surface of substrate 1 is provided with upper silicon oxynitride film layer 2 and upper SiO 2 Film layer 3, upper silicon oxynitride film layer 2 and upper SiO 2 The film layer 3 constitutes a set of upper composite film layers; the bottom surface of the substrate 1 is provided with a lower silicon oxynitride film layer 4 and a lower SiO 2 Film layer 5, lower silicon oxynitride film layer 4 and lower SiO 2 The film layer 5 constitutes a group of lower composite film layers; the outer membrane surface of the upper composite film layer is provided with an ITO layer 6; the molecular formula of the silicon oxynitride is SiN x o y , where x, y are the moles of nitrogen and oxygen respectively, x=1.213, y=0.181, x / y=6.7, SiN x o y The refractive index of the substrate 1 is 1.9; the thickness of the substrate 1 is 1....

Embodiment 2

[0028] In this embodiment, the film structure distribution of the antireflection and anti-reflection transparent conductive thin film is consistent with that in Embodiment 1, and the SiN x o y Where x=1, y= 1 / 3, x / y=3, SiN x o y The refractive index of the substrate 1 is 1.75; the thickness of the substrate 1 is 0.1mm, the thickness of the upper silicon oxynitride film layer 2 is 51nm, and the upper SiO 2 The thickness of the film layer 3 is 34nm, the thickness of the lower silicon oxynitride film layer 4 is 80nm, and the lower SiO 2 The thickness of the film layer 5 is 68nm, the surface resistance of the ITO layer 6 is 200Ω / □, and the thickness is 23nm. combine Figure 4 and Figure 5Shown, under D65 light source condition, the visible light transmission spectrum A3 of ITO layer 6 unetched regions, the visible light transmission spectrum B3 of ITO layer 6 etched regions, the visible light reflectance spectrum A4 of ITO layer 6 unetched regions, the ITO layer 6 etched reg...

Embodiment 3

[0037] In this embodiment, the ITO layer 6 in the anti-reflection and anti-reflection transparent conductive thin film is arranged on the outer film surface of the lower composite film layer, and the distribution of other film structures is consistent with that of Embodiment 1. SiN x o y Where x=4 / 3, y= 0, SiN x o y The refractive index is 2.0; the thickness of the substrate 1 is 0.6mm, the thickness of the upper silicon nitride oxide film layer 2 is 18nm, and the upper SiO 2 The thickness of the film layer 3 is 30nm, the thickness of the lower silicon oxynitride film layer 4 is 20nm, and the lower SiO 2 The thickness of the film layer 5 is 100nm, the surface resistance of the ITO layer 6 is 130Ω / □, and the thickness is 35nm. combine Figure 6 and Figure 7 Shown, under D65 light source condition, the visible light transmission spectrum A5 of ITO layer 6 unetched regions, the visible light transmission spectrum B5 of ITO layer 6 etched regions, the visible light reflectan...

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Abstract

The invention discloses an antireflection and antireflection transparent conductive film, which includes a substrate, and the top surface of the substrate is sequentially provided with an upper silicon nitride oxide film layer and an upper SiO 2 film layer, the upper silicon oxynitride film layer and the upper SiO 2 The film layer constitutes a group of upper composite film layers, and at least one set of upper composite film layers is provided on the top surface of the substrate; the bottom surface of the substrate is provided with a lower silicon oxynitride film layer and a lower SiO 2 film layer, the lower silicon oxynitride film layer and the lower SiO 2 The film layer constitutes a set of lower composite film layers, and at least one set of lower composite film layers is arranged on the bottom surface of the substrate; the outer film surface of the upper composite film layer and / or the lower composite film layer is provided with an ITO layer; the molecular formula of the silicon oxynitride is SiN x o y , where x and y are the moles of nitrogen and oxygen respectively, 1≤x≤4 / 3, 0≤y≤1 / 3, x / y≥3; silicon nitride oxide film layer and SiO 2 The film layer uses the principle of optical interference and extinction to make the etched and unetched areas of the ITO layer have similar color values ​​under D65 light source conditions, and they are all neutral, reducing the influence of film thickness on the color change of the film system, making the extinction effect more effective It is easy to control and reduces the production cost.

Description

technical field [0001] The invention relates to the technical field of touch screens, in particular to an anti-reflection and anti-reflection transparent conductive film capable of eliminating the color difference between an etched area and an unetched area. Background technique [0002] The transparent conductive oxide film is the main component of the capacitive touch screen. The film is located in the display area and is generally etched from an ITO film. The refractive index of the conductive film is different from that of the touch screen substrate. The refractive index of the ITO film is generally 1.9-2.0. The refractive index of the touch screen substrate is about 1.5, resulting in a large difference between the visible light reflection and transmission spectra of the electrodes (ITO) and the electrode gaps in the display area, so that the electrodes and the gaps are clearly visible (color difference Δa * with Δb * greater than 1), and the color is not neutral (color...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/044
Inventor 孟政刘静汪洪
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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