Anisotropic magnetic resistance material with NiFe alloy magnetic layer and preparation method of anisotropic magnetic resistance material

A technology of anisotropic magnetic and resistive materials, which is applied in the manufacture/processing of magnetic field-controlled resistors and electromagnetic devices, can solve problems such as unfavorable device sensitivity, AMR ratio attenuation, stability problems, etc., to reduce magnetic field sensitivity, Effect of improving coercive force and enhancing stability

Inactive Publication Date: 2015-08-19
INNER MONGOLIA UNIVERSITY
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Problems solved by technology

However, this material still has obvious shortcomings: although the excellent soft magnetic properties of NiFe make it have extremely high magnetic field sensitivity, it also brings stability problems
From the application point of view, it

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  • Anisotropic magnetic resistance material with NiFe alloy magnetic layer and preparation method of anisotropic magnetic resistance material

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Embodiment

[0027] Such as figure 1 The shown anisotropic magnetoresistive material sequentially includes a thermally oxidized silicon or glass substrate 1, a Ta buffer layer 2, a first NiO pinning stabilization layer 3, a NiFe magnetic layer 4, a second NiO pinning stabilization layer 5 and Ta protective layer6.

[0028] The preparation method of anisotropic magnetoresistance material is as follows: Ta, NiO, NiFe, NiO and Ta are sequentially deposited on thermally oxidized single crystal silicon or glass substrate by magnetron sputtering technology, and the above layers correspond to the aforementioned Ta buffer Layer 2 , first NiO pinning stabilization layer 3 , NiFe magnetic layer 4 , second NiO pinning stabilization layer 5 and Ta protection layer 6 .

[0029] In step S1, the thermally oxidized single crystal silicon or glass substrate is ultrasonically cleaned with electronic cleaning solution and deionized water, and then dried for use.

[0030] Step S2, install the washed single ...

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Abstract

The invention relates to an anisotropic magnetic resistance material and specifically relates to ananisotropic magnetic resistance material with a NiFe alloy magnetic layer. The invention belongs to the technical field of magnetic resistance material. According to the invention, on a regular Ta/NiFe/Ta structural base, a NiO pinning stabilization layer having a certain thickness is added between Ta and NiFe. On one hand, NiO is an anti-ferromagnetic material. When the anti-ferromagnetic material contacts with the magnetic layer, exchange interaction is generated on an interface. With the exchange interaction, the magnetic layer may be pinned in a specific direction, with magnetic moment being stabilized, so that the magnetic layer is not easy to be affected by interference magnetic field. On the other hand, for AMR film material, mirror reflection of conducting electrons on the interface facilitates AMR rate. Oxide/metal growing successively can form the comparatively fat interface, so that mirror reflection of the conducting electrons is enhanced.

Description

technical field [0001] The invention relates to an anisotropic magnetoresistance material, in particular to an anisotropic magnetoresistance material with a NiFe alloy as a magnetic layer, and belongs to the technical field of magnetoresistance materials. Background technique [0002] Anisotropic magnetoresistance (AMR) effect refers to the phenomenon that below the Curie temperature, the relative orientation of current and magnetization changes, resulting in a change in the resistivity of magnetic metals. Sensors based on the AMR effect have extremely high magnetic field sensitivity and have become key devices for weak magnetic field sensing and detection. Among the many materials with AMR effect, NiFe alloy film (where the weight ratio of Ni and Fe is 80+δ:20–δ, |δ|<<10) is currently the most widely used one, mainly because the material It has the best overall performance: relatively large AMR ratio and excellent soft magnetic properties (extremely low coercive forc...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12
Inventor 朱俊刘弈帆王延来徐湘田肖玲玲
Owner INNER MONGOLIA UNIVERSITY
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