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Metal membrane containing metal membranes containing metal membranes with etching solution

A technology of composition and etching solution, which is applied in the field of etching solution composition for metal film, and can solve problems such as etching speed delay

Active Publication Date: 2017-11-24
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the above-mentioned etching solution, although the cyclic amine compound 5-aminotetrazole plays the role of reducing the etching gradient, when the content of 5-aminotetrazole is increased, there is a problem that the etching speed is delayed.

Method used

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  • Metal membrane containing metal membranes containing metal membranes with etching solution
  • Metal membrane containing metal membranes containing metal membranes with etching solution
  • Metal membrane containing metal membranes containing metal membranes with etching solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 5 and comparative example 1

[0058] Examples 1 to 5 and Comparative Example 1. Manufacture of Etching Solution Composition for Metal Film

[0059] The etching liquid composition for metal films was manufactured using the components and content shown in Table 1 below.

[0060] The unit of content of each component in the following Table 1 is weight %, and the balance is water.

[0061] 【Table 1】

[0062] distinguish

APS

AF

HNO 3

ATZ

p-TSA

A.A.

AcOH

h 3 PO 3

Example 1

15

0.7

3

1.2

3.0

2.5

8.0

0.5

Example 2

15

0.7

3

1.2

3.0

2.5

8.0

0.8

Example 3

15

0.7

3

1.2

3.0

2.5

8.0

1.0

Example 4

15

0.7

3

1.2

3.0

2.5

8.0

1.2

Example 5

15

0.7

3

1.2

3.0

2.5

8.0

1.5

Comparative example 1

15

0.7

3

1.2

3.0

2.5

8.0

0

[0063] APS: Ammonium persulfate

[0064] AF: Ammonium fluoride

[006...

experiment example 1

[0069] Experimental example 1. Measurement of etching rate and etching gradient

[0070] The experimental equipment of the spray etching method used a 0.5-generation etcher (Etcher) (AST Company). When performing the etching process, the temperature of the etching solution composition was about 26° C., and the etching time was about 100 to 130 seconds.

[0071] When measuring the cross-section of the etched copper-based double film in the above-mentioned etching process, the cross-section SEM (Hitachi (Hitachi) company product, model name S-4700) was used to measure, and in the following Table 2 and figure 1 The results are shown in .

[0072] 【Table 2】

[0073]

[0074] Such as figure 1 As shown in Table 2, it was confirmed that the etchant composition for a metal film containing phosphorous acid can adjust the inclination of the etching slope without delaying the etching rate.

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Abstract

The present invention relates to an etchant composition for a metal film containing phosphorous acid. The etching solution composition for a metal film of the present invention can adjust the inclination of the etching slope without delaying the etching rate by containing phosphorous acid and can provide a stable etching solution over time without including an environmental control substance.

Description

technical field [0001] The present invention relates to an etchant composition for a metal film containing phosphorous acid. Background technique [0002] As an electronic circuit for driving a semiconductor device and a flat panel display device, a thin film transistor (TFT, thin film transistor) is representative. The manufacturing process of TFT usually consists of the following steps. After forming a metal film on the substrate as a gate and data wiring material, and forming a photoresist on a selective area of ​​the metal film, the above photoresist is used as mask to etch the metal film. [0003] Recently, in semiconductor devices or flat panel display devices, the resistance of metal wirings has become a major focus. Since the resistance is a main factor causing delay of the RC signal, it plays a very important role in increasing the size of the panel and realizing high resolution in the flat panel display device. [0004] In order to reduce the required RC signal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26C23F1/44
Inventor 刘仁浩鞠仁说
Owner DONGWOO FINE CHEM CO LTD
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