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Semiconductor device and method for manufacturing same
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A semiconductor and conductivity-type technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the inability to maintain the operation of semiconductor devices and damage semiconductor devices
Inactive Publication Date: 2015-09-16
KK TOSHIBA
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Abstract
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Problems solved by technology
In this case, the gate drive cannot be performed, and the operation in the safe operating region of the semiconductor device cannot be maintained, so the semiconductor device may be damaged.
Method used
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no. 1 approach
[0032] figure 1 (a) and figure 1 (b) is a schematic cross-sectional view of the semiconductor device of the first embodiment.
[0033] figure 2 It is a schematic plan view of the semiconductor device of the first embodiment.
[0034] figure 1 (a) means figure 2 The section of the X1-X1′ line, figure 1 (b) means figure 2 The section of the X2-X2' line. figure 2 express yes figure 1 (a) and (b) A-A' line cross-section as seen in plan view. and, figure 1 (a), (b), figure 2 Indicates three-dimensional coordinates (X axis, Y axis, Z axis). Furthermore, in the embodiment, the collector side may be set as the lower side, and the emitter side may be set as the upper side.
[0035] The semiconductor device 1A is, for example, an IGBT having a top and bottom electrode structure. The semiconductor device 1A includes, for example, a collector electrode 10 (first electrode) and an emitter electrode 11 (second electrode). Between the collector electrode 10 and the emitter...
no. 2 approach
[0114] Figure 17 (a)~ Figure 17 (c) is a schematic cross-sectional view of the semiconductor device of the second embodiment.
[0115] Figure 18 It is a schematic plan view of the semiconductor device of the second embodiment.
[0116] Figure 17 (a) means Figure 18 The section of the X1-X1′ line, Figure 17 (b) means Figure 18 The section of the X2-X2′ line, Figure 17 (c) means Figure 18 The section of the X3-X3' line. Figure 18 express yes Figure 17 (a)~ Figure 17 (c) The cross section along the A-A' line is the state seen in plan view.
[0117] The semiconductor device 2A includes, for example, a collector electrode 10 and an emitter electrode 11 . Between the collector electrode 10 and the emitter electrode 11, a p + Type collector region 22, n-type buffer region 21, n - Type base layer 20, p-type base region 30, n + type emitter region 40, p + Type contact region 32 , electrode 50 , gate electrode 52 and interlayer insulating film 60 .
[0118] ...
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Abstract
According to one embodiment, a semiconductor device including: a first electrode; a second electrode having a portion extending toward the first electrode side; a first semiconductor layer; a first semiconductor region provided between the first semiconductor layer and the second electrode; a second semiconductor region provided between the first semiconductor region and the second electrode, and the second semiconductor region being in contact with the portion; a third electrode provided between the first electrode and the portion, and the third electrode being connected to the portion; a fourth electrode provided on the first semiconductor layer, the first semiconductor region, and the second semiconductor region via a second insulating film; and a third semiconductor region provided between the first semiconductor region and the second semiconductor region, and the third semiconductor region having a higher impurity concentration than the first semiconductor region.
Description
[0001] [Related Application] [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-52152 (filing date: March 14, 2014). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same. Background technique [0004] Semiconductor devices such as IGBTs (Insulated Gate Bipolar Transistors) control large currents through switching operations. It is required that the switching action is carried out in the safe operation area (Safe Operation Area). [0005] However, there are cases where, for example, a parasitic thyristor formed in a semiconductor device is turned on if carriers are excessively stored in the base layer when turned off. In this case, the gate drive cannot be performed, and the operation in the safe operating region of ...
Claims
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Application Information
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