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Thin film transistor, manufacturing method, array substrate and display panel

A technology of thin film transistor and manufacturing method, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve the problems of high cost of manufacturing thin-film transistors, etc.

Active Publication Date: 2015-09-30
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, manufacturing thin film transistors requires a higher cost

Method used

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  • Thin film transistor, manufacturing method, array substrate and display panel
  • Thin film transistor, manufacturing method, array substrate and display panel
  • Thin film transistor, manufacturing method, array substrate and display panel

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Embodiment Construction

[0064] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0065] As shown in Fig. 2(e), as one aspect of the present invention, a kind of thin film transistor is provided, and this thin film transistor comprises active layer 100, and the gate 400 that is insulated from this active layer 100 and is arranged at an interval, and is arranged on active layer The insulating layer 200 above 100 , the source 310 contacting the active layer 100 through the source via hole penetrating the insulating layer 200 , and the drain 320 contacting the active layer 100 through the drain via penetrating the insulating layer 200 . Wherein, the source via hole includes a source portion and a source via portion formed under the source portio...

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Abstract

The invention provides a thin film transistor. The thin film transistor comprises an active layer, a gate insulated and spaced with the active layer, an insulating layer, a source contacted with the active layer through a source via hole penetrating through the insulating layer as well as a drain contacted with the active layer through a drain via hole penetrating through the insulating layer, wherein the source via hole forms a stepped hole, and the drain via hole forms a stepped hole. The invention further provides an array substrate used for a display panel, the display panel and a manufacturing method of the thin film transistor. Compared with the prior art, a mask plate is used one less time less when the thin film transistor is manufactured, and accordingly, the manufacturing cost of the thin film transistor is reduced.

Description

technical field [0001] The present invention relates to the field of display devices, in particular to a thin film transistor, a manufacturing method of the thin film transistor, a display panel including the thin film transistor and an array substrate of the display panel. Background technique [0002] Due to the advantages of high brightness, high contrast, wide viewing angle, and self-illumination, light-emitting diode display products have received more and more attention. [0003] Figure 1(a) to Figure 1(f) Shown in is the steps of manufacturing thin film transistors in light-emitting diode display devices in the prior art. It can be seen from the figure that in the prior art, the method for manufacturing thin film transistors includes the following steps: [0004] As shown in FIG. 1( a), a buffer layer 600, an active layer 100, a gate insulating layer 210, a gate 400, and an interlayer insulating layer 220 are sequentially formed on a substrate 500, and the gate insul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L27/12
CPCH01L29/41733H01L23/535H01L27/1222H01L27/124H01L27/1248H01L27/1288H01L29/0649H01L29/42384H01L29/6675H01L29/78684H01L29/786H01L27/1214H01L29/66742
Inventor 李良坚左岳平马应海许晓伟
Owner BOE TECH GRP CO LTD