A kind of thin film transistor array substrate, its manufacturing method and display device

A technology of thin film transistors and array substrates, applied in the display field, can solve the problems of uneven bending, uneven picture, leakage and other problems

Active Publication Date: 2019-01-15
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After analysis, the mechanism of failure is: it is related to the residual sand on the plate electrode layer (such as the common electrode), such as Figure 1a and Figure 1b As shown, the area with severe residual sand is likely to cause the active layer 01 in the thin film transistor to be bent and uneven, resulting in a large Ioff characteristic of the thin film transistor, serious leakage, and uneven picture

Method used

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  • A kind of thin film transistor array substrate, its manufacturing method and display device
  • A kind of thin film transistor array substrate, its manufacturing method and display device
  • A kind of thin film transistor array substrate, its manufacturing method and display device

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Embodiment Construction

[0040] The specific implementations of the thin film transistor array substrate provided by the embodiments of the present invention, its manufacturing method and the display device will be described in detail below with reference to the accompanying drawings.

[0041] Wherein, the thickness and shape of each film layer in the drawings do not reflect the real ratio of the thin film transistor array substrate, and the purpose is only to illustrate the content of the present invention.

[0042] An embodiment of the present invention provides a thin film transistor array substrate, such as Figure 2a to Figure 2c As shown, it includes: a base substrate 1, a gate disposed on the base substrate 1, and a gate insulating layer and an active layer 4 sequentially disposed on the gate;

[0043] Also includes: a pixel electrode, a common electrode and a transparent electrode layer 3 arranged on the base substrate 1; wherein,

[0044] The transparent electrode layer 3 is the same layer a...

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Abstract

The invention discloses a thin film transistor array substrate, a manufacturing method thereof and a display device, comprising: a base substrate, a gate disposed on the base substrate, and a gate insulating layer and an active layer sequentially disposed on the gate ; Also includes: pixel electrodes, common electrodes and transparent electrode layers arranged on the base substrate; wherein, the transparent electrode layer and the pixel electrode / common electrode are of the same layer and material; the transparent electrode layer is located below the gate insulating layer; the active The orthographic projection of the layer on the base substrate is located in the area of ​​the orthographic projection of the transparent electrode layer. Since the transparent electrode layer of the same layer and material as the pixel electrode or the common electrode is arranged directly under the active layer in the thin film transistor, the residual sand on the electrode layer in the area where the thin film transistor is located can be improved, the surface of the active layer is smoothed, and the residual sand is avoided. The phenomenon of image unevenness caused by sand is simple to implement, and has little impact on grid resistance, which can improve product quality.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor array substrate, a manufacturing method thereof and a display device. Background technique [0002] At present, the Advanced Super Dimension Switch (ADS for short) thin film transistor liquid crystal display uses the electric field generated by the edge of the slit electrode in the same plane and the multi-dimensional electric field formed between the slit electrode layer and the plate electrode layer, so that All oriented liquid crystal molecules between the slit electrodes in the liquid crystal cell and directly above the electrodes can rotate, thereby improving the working efficiency of the liquid crystal and increasing the light transmittance. Therefore, ADS technology can improve the picture quality of the product, and has the advantages of high resolution, high transmittance, low power consumption, and wide viewing angle. [0003] The ADS technology...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/77H01L21/768G02F1/1343
CPCH01L21/768H01L29/42384H01L29/4908H01L29/78603H01L27/1218G02F1/1362H01L27/124H01L27/127G02F1/13629G02F1/136295G02F1/1343G02F1/134309G02F1/13439G02F1/136286G02F1/1368G02F2201/121G02F2201/123
Inventor 冯伟
Owner BOE TECH GRP CO LTD
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