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Group-III nitride crystal growing device

A nitride crystal and growth device technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of lack of solution stirring and low solubility of reactants, etc., to improve crystal quality, improve raw material utilization, and suppress polycrystalline effect

Active Publication Date: 2015-12-02
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] The traditional sodium flux method reactor is a fixed reactor. During the reaction, the reactor is fixed. The growth conditions are achieved by feeding nitrogen and heating around the reactor body. This kind of reactor lacks solution stirring. , the solubility of the reactant is low, and the high concentration of N at the gas-liquid interface is difficult to enter the solution to participate in the reaction, and the synthesized GaN crystal has crystal quality problems such as N vacancies

Method used

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Embodiment 1

[0038] Embodiment one, as attached Figure 2-5 As shown, the reactor 10 is set in a cylindrical shape, and the reactor 10 is placed horizontally, that is, the reactor 10 is placed horizontally based on its central axis. Rolling shafts 11 are arranged on both sides of the reaction kettle 10, and the rolling mode is shaft rolling, and the rolling shafts are connected with a rolling driving device. The number of the seed crystal template 13 is one, and the seed crystal template 13 is fixed on the bottom of the reactor 10, and will not move with the movement of the reactor 10, and the seed crystal template 13 does not move synchronously with the reactor 10. The reaction raw material Ga, Na solution 12 is immersed in the seed crystal template 13, and the filling degree of the growth solution to the inner space of the reactor is 30%. Nitrogen gas 15 is above the reaction raw material solution 12 .

[0039] The reaction kettle 10 is heated and pressurized to the required conditions...

Embodiment 2

[0040] Embodiment two, as attached Image 6 As shown, the reactor 20 is in the shape of a cylinder, and the reactor 20 is placed horizontally, that is, the reactor 20 is placed horizontally based on its central axis. The rolling mode is transmission belt rolling. The transmission belt 28 is connected to the side of the cylinder, and the transmission belt 28 is connected with the rolling drive device 26. The rolling drive device 26 drives the reactor to roll through the transmission belt 28, and rolls according to the rolling direction 24. The number of the seed crystal template 23 is one, and the seed crystal template 23 is fixed at the bottom of the reactor 20 and does not move with the reactor 20, and the seed crystal template 23 does not move synchronously with the reactor 20. The reaction raw material Ga, Na solution 22 is immersed in the seed crystal template 23, and the filling degree of the growth solution to the internal space of the reactor is 30%. Nitrogen gas 25 is...

Embodiment 3

[0042] Embodiment three, as attached Figure 7As shown, the reactor 30 is cylindrical, and the reactor 30 is placed horizontally, that is, the reactor 30 is placed horizontally based on its central axis. The rolling mode is guide wheel rolling. A guide wheel 36 is installed on the side of the cylinder. The guide wheel 36 is connected with the rolling drive device. The number of seed crystal template 33 is one, and the seed crystal template 33 is fixed on the bottom of the reactor 30 and does not move with the reactor 30, that is, the seed crystal template does not move synchronously with the reactor during the rolling process of the reactor 30. The reaction raw material Ga, Na solution 32 is immersed in the seed crystal template 33, and the filling degree of the growth solution to the internal space of the reactor is 30%. Nitrogen gas 35 is above the reaction raw material solution 32 .

[0043] The reaction kettle 30 is heated and pressurized to the required conditions for c...

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Abstract

The invention discloses a group-III nitride crystal growing device. The group-III nitride crystal growing device comprises a reaction kettle, wherein a crystal seed template is arranged in the reaction kettle; the reaction kettle is connected with a rolling driving device; the rolling driving device is used for driving the reaction kettle to rotate in the horizontal direction or a direction oblique to the horizontal direction. According to the group-III nitride crystal growing device, the disadvantage that N sources are not sufficient in a nitride crystal growing process of a traditional reaction device is effectively overcome, and the problems of N vacancies, poor crystal quality, low growth velocity and the like of nitride crystals can be effectively avoided.

Description

technical field [0001] The invention relates to the field of nitride single crystal semiconductor materials, in particular to a nitride single crystal growth device. Background technique [0002] In recent years, III-nitride single crystals have been widely used in blue-white LEDs, ultraviolet lasers, and other semiconductor devices. The traditional preparation method of gallium nitride adopts the vapor phase method, and the specific method is to deposit gallium nitride thin films on heterogeneous substrates such as sapphire or SiC. Due to the different thermal expansion coefficients and lattice constants of heterogeneous substrates, gallium nitride thin films prepared by this method generally have high dislocation density and poor crystal quality. In addition to the gas-phase method, a liquid-phase method has also been developed. Sodium flux method (NaFlux) is a kind of liquid phase method, using metallic sodium as a flux, can reduce the crystal synthesis temperature to l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B7/14
Inventor 巫永鹏李成明刘南柳陈蛟罗睿宏李顺峰张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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