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Piezoelectric-triboelectric composite mems broadband energy harvester and preparation method thereof

An energy harvester and piezoelectric energy technology, applied in the field of micro-energy, can solve the problems of low output power and narrow frequency band, and achieve the effect of improving output performance, improving output performance and wide application prospect.

Inactive Publication Date: 2017-06-09
NANCHANG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One of the purposes of the present invention is to provide a piezoelectric-triboelectric composite MEMS broadband energy harvester and its preparation method to solve the defects of the prior art, so that the transducer element can obtain greater output power in a low-frequency vibration environment , to solve the problems of low output power and narrow frequency band of traditional MEMS piezoelectric energy harvesters

Method used

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  • Piezoelectric-triboelectric composite mems broadband energy harvester and preparation method thereof
  • Piezoelectric-triboelectric composite mems broadband energy harvester and preparation method thereof
  • Piezoelectric-triboelectric composite mems broadband energy harvester and preparation method thereof

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preparation example Construction

[0063] The present invention also provides a method for preparing a piezoelectric-triboelectric composite MEMS broadband energy harvester, comprising the following steps:

[0064] S1: Using bonding and thinning techniques to prepare a piezoelectric thick film layer on a silicon wafer, and fabricate a piezoelectric thick film electrode layer (5) on the surface of the piezoelectric thick film (3);

[0065] The silicon wafer refers to an SOI silicon wafer whose upper and lower surfaces are polished on both sides and a layer of silicon dioxide is thermally oxidized on the surface.

[0066] The step of preparing a piezoelectric thick film layer by bonding and thinning technology, specifically includes: combining the single-sided polished piezoelectric body with the silicon wafer through epoxy bonding technology, or combining the polished surface of the piezoelectric body with the silicon wafer After a layer of electrode layer is deposited on the surface, the piezoelectric material ...

Embodiment 1

[0082] Such as figure 1 As shown, the piezoelectric-triboelectric composite MEMS energy harvester in this embodiment includes the main structure of the piezoelectric energy harvester, a blocking block and a gasket;

[0083] The main structure of the piezoelectric energy harvester includes: a silicon fixed base, 2 silicon-based piezoelectric cantilever beams and 2 mass blocks;

[0084] The silicon fixed base includes: a silicon wafer (1) and silicon dioxide layers (2) on both sides thereof;

[0085] The silicon-based piezoelectric cantilever beam on the piezoelectric main structure includes: a silicon cantilever beam support layer and a piezoelectric thick film layer attached to the silicon cantilever beam support layer; the silicon cantilever beam support layer includes a second silicon layer (4), a The silicon dioxide layer (2) on the upper and lower surfaces of the second silicon layer (4) and the supporting layer electrode layer (16) on the silicon dioxide layer (2) on the...

Embodiment 2

[0114] Such as image 3 As shown, a piezoelectric-triboelectric composite MEMS energy harvester provided in this embodiment includes: a main structure of the piezoelectric energy harvester, a blocking block and a gasket.

[0115] The main structure of the piezoelectric energy harvester includes: a silicon fixed base, 2 silicon-based piezoelectric cantilever beams and 2 mass blocks;

[0116] The silicon fixing base comprises: a silicon wafer (1) and silicon dioxide layers (2) on both sides thereof;

[0117] The silicon-based piezoelectric cantilever beam on the piezoelectric main structure includes: a silicon cantilever beam support layer and a piezoelectric thick film layer attached to the silicon cantilever beam support layer; the silicon cantilever beam support layer includes a second silicon layer (4), a The silicon dioxide layer (2) on the upper and lower surfaces of the second silicon layer (4) and the supporting layer electrode layer (16) on the silicon dioxide layer (2...

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Abstract

A piezoelectric-triboelectric composite MEMS broadband energy harvester and a preparation method thereof, the collector includes a main structure of the piezoelectric energy harvester, a blocking block and a gasket; the main structure of the piezoelectric energy harvester includes a silicon fixed base, Silicon-based piezoelectric cantilever and mass block; silicon fixed base includes silicon layer and silicon dioxide layer on both sides; silicon-based piezoelectric cantilever includes silicon cantilever support layer and piezoelectric thick film layer on it; silicon The support layer of the cantilever beam includes a silicon layer, a silicon dioxide layer and a support layer electrode layer; the piezoelectric thick film layer includes a piezoelectric thick film and a piezoelectric thick film electrode layer on its surface; the quality block includes an integrated silicon mass block and its surface The friction layer and the blocking block include a friction layer base, an electrode layer and a friction layer; the gasket is located between the silicon fixed base and the blocking block. The invention enables the energy-transducing element to obtain relatively large output power in a low-frequency vibration environment, so as to solve the problems of low output power and narrow frequency band of traditional MEMS piezoelectric energy collectors.

Description

technical field [0001] The invention belongs to the field of micro-energy technology, and in particular relates to a piezoelectric-triboelectric composite MEMS broadband energy collector and a preparation method thereof. Background technique [0002] Wireless Sensor Network (WSN for short) is a network composed of low-cost, dense, randomly distributed tiny nodes integrated with sensors, data processing units and short-range wireless communication modules through self-organization. With the help of various types of sensors built into the nodes, it senses, collects and monitors the surrounding environmental signals, and finally realizes all-round monitoring and control of the physical world we live in. Low-power, small-sized wireless sensor nodes are fundamental components of WSNs, usually powered by common chemical batteries. However, considering that the batteries carried by these sensors have a limited lifespan and a large number, and may be installed in some application s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02N1/04H02N2/18B81C3/00
CPCB81C3/001H02N1/04H02N2/183H02N2/22
Inventor 唐刚邬文静胡敏李志彪徐斌闫肖肖邓小珍徐兵侯诚
Owner NANCHANG INST OF TECH
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