Narrow band-gap carbon nitride visible light photocatalyst and preparation method thereof

A technology of gap carbon nitride and catalyst, which is applied in the field of narrow band gap carbon nitride catalyst and its preparation, which can solve the problems of long reaction time and achieve the effects of low reaction temperature, convenient separation and treatment, and rich sources of raw materials

Active Publication Date: 2015-12-30
HUAWEI TEHCHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, using g-C 3 N 4 Wide visible...

Method used

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  • Narrow band-gap carbon nitride visible light photocatalyst and preparation method thereof
  • Narrow band-gap carbon nitride visible light photocatalyst and preparation method thereof
  • Narrow band-gap carbon nitride visible light photocatalyst and preparation method thereof

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Embodiment 1

[0033] Disperse cyanuric chloride and thiocyanic acid at a molar ratio of 1:1 in acetonitrile and stir at room temperature for 12 hours. The mixed solution was transferred to a hydrothermal reaction kettle and heat-treated at a constant temperature of 180 degrees for 24 hours. Cool naturally to room temperature, separate and wash the solid product, and prepare graphite phase carbon nitride with a narrow band gap.

Embodiment 2

[0035] Disperse cyanuric chloride and thiocyanic acid at a molar ratio of 1:1 in acetonitrile and stir at room temperature for 12 hours. The mixed solution was transferred to a hydrothermal reactor and heat-treated at a constant temperature of 180 degrees for 48 hours. Cool naturally to room temperature, separate and wash the solid product, and prepare graphite phase carbon nitride with a narrow band gap.

Embodiment 3

[0037] Disperse cyanuric chloride and thiocyanic acid at a molar ratio of 5:1 in acetonitrile and stir at room temperature for 12 hours. The mixed solution was transferred to a hydrothermal reaction kettle, and heat treated at a constant temperature of 200 degrees for 72 hours. Cool naturally to room temperature, separate and wash the solid product, and prepare graphite phase carbon nitride with a narrow band gap.

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Abstract

The invention discloses a preparation method of a narrow band-gap carbon nitride visible light photocatalyst, and belongs to the technical fields of material preparation and solar photocatalysis. The preparation method comprises the following steps: 1) dispersing cyanuric chloride and trithiocyanuric acid into an organic solvent according to the molar ratio of 1: (0.2-5), and stirring at the room temperature to obtain a reaction mixture; 2) transferring the reaction mixture into a tetrafluoroethylene-lined hydrothermal reaction still, and carrying out heat treatment to obtain the narrow band-gap graphite phase carbon nitride visible light photocatalyst. The invention also discloses the catalyst prepared through the preparation method. According to the preparation method, the band gap width of carbon nitride is decreased, the visual light absorption range is enlarged, and the photon-generated carrier separation and migration efficiency is improved; the catalyst prepared through the method is stable in property, nontoxic, and easy to recycle, can be circularly used, conforms to the requirement of practical production, and facilitates large-scale popularization.

Description

technical field [0001] The invention belongs to the technical field of material preparation and solar photocatalysis, and specifically relates to a narrow band gap carbon nitride visible light catalyst and a preparation method thereof. Background technique [0002] Environmental pollution is a major problem facing human society at present, and the development of green and efficient solar photocatalysis technology is an important way to solve this problem. In the process of developing photocatalytic technology, the core issue is to explore and develop high-efficiency and practical photocatalyst materials with excellent performance, green friendliness, low cost and stability. [0003] Non-metallic polymer semiconductors have a bandgap equivalent to that of inorganic semiconductors, and the preparation process is simple, low in price, and convenient for molecular design, so they are developing very rapidly. In 2009, polymer semiconductor-graphite carbon nitride (g-C 3 N 4 ) ...

Claims

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Application Information

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IPC IPC(8): B01J27/24C01B21/082
Inventor 崔言娟王浩陈芳艳
Owner HUAWEI TEHCHNOLOGIES CO LTD
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